Electrical transport in nanostructured Ni3Al at low temperatures

被引：0

作者：

Zhu, Dongdong ^{[1
]}

Dai, Fei ^{[1
]}

Lei, Haile ^{[1
]}

机构：

[1] China Acad Engn Phys, Res Ctr Laser Fus, Mianyang 621900, Peoples R China

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2024年 / 57卷 / 39期

基金：

中国国家自然科学基金;

关键词：

electron transport; magnetic materials; phase transition; Ni3Al; TRANSITION; NANOPARTICLES; SUPPRESSION;

D O I：

10.1088/1361-6463/ad5c7a

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electrical resistivity in nanostructured Ni3Al has been discriminated to be dominated fully by the electron-magnon scattering with spin fluctuations and evolve in the form of T-5/3 and T-3/2 below and above its Curie temperature. In addition to doping into gamma'-Ni3Al nanophases, excessive Ni atoms are demonstrated to aggregate at the cores of Ni3Al so that some gamma-Ni nanophases are embedded in the gamma'-Ni3Al ones for forming the core/shell nanostructure. The itinerant electrons from gamma'-Ni3Al nanophases is further suggested to wander around the phonons in both gamma-Ni and gamma'-Ni3Al nanophases for screening the electron-phonon interactions. Consequently, the conduction electrons are scattered largely by spin fluctuations in gamma'-Ni3Al shells to suppress the contribution of phonons to the electron transport in nanostructured Ni3Al.

引用

页数：7

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