Effect of the incorporation of gallium ions into silver indium sulfide nanocrystals

被引：1

作者：

Ban, Jiyeon ^{[1
]}

Eom, So Young ^{[1
]}

Lee, Hak June ^{[2
,3
]}

An, Mai Ngoc ^{[4
]}

Cho, Beomsu ^{[1
]}

Lee, Yong Ho ^{[1
]}

Bae, Wan Ki ^{[2
]}

Jeong, Kwang Seob ^{[1
,4
]}

机构：

[1] Korea Univ, Dept Chem, Seoul 02841, South Korea

[2] Sungkyunkwan Univ SKKU, SKKU Adv Inst Nanotechnol SAINT, Suwon 16419, South Korea

[3] Seoul Natl Univ, Sch Chem & Biol Engn, Seoul 08826, South Korea

[4] Korea Univ, Inst Basic Sci IBS, Ctr Mol Spect & Dynam, Seoul 02841, South Korea

来源：

CHEMICAL COMMUNICATIONS | 2024年 / 60卷 / 44期

基金：

新加坡国家研究基金会;

关键词：

Compendex;

D O I：

10.1039/d4cc00859f

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Gallium ion incorporation into silver indium gallium sulfide nanocrystals is investigated by various methods, including photoluminescence (PL) and X-ray photoelectron spectroscopy. The ZnS shell-growth enhances a PL quantum yield of up to 16%, with which the quantum dot light-emitting diode was successfully fabricated. The effect of Ga ion incorporation into silver indium gallium sulfide nanocrystals on the structure and optical properties is reported.

引用

页码：5731 / 5734

页数：4