Phase stabilization of Fe doped SnS by solvothermal method and its structural, morphological and optoelectronic properties for photovoltaic applications

被引：4

作者：

Baby, Benjamin Hudson ^{[1
]}

Shajan, Nirmal T. ^{[2
]}

Joseph, D. Paul ^{[1
]}

Fathima, C. A. ^{[3
]}

Varghese, Gincy K. ^{[3
]}

Mohan, D. Bharathi ^{[2
]}

机构：

[1] Natl Inst Technol, Dept Phys, Warangal 506004, Telangana, India

[2] Pondicherry Univ, Dept Phys, Pondicherry 605014, India

[3] MES Coll, Dept Biotechnol, Marampally, Aluva 683107, Kerala, India

来源：

SOLID STATE COMMUNICATIONS | 2024年 / 386卷

关键词：

SnS; Solvothermal method; Doping; Band gap; Electrical resistivity; THIN-FILMS; SURFACE-MORPHOLOGY; AG; NANOPARTICLES; STABILITY; NANORODS; SPECTRA; CU;

D O I：

10.1016/j.ssc.2024.115525

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

This letter reports the doping of Fe (Sn 1-x Fe x S, x = 0, 0.002, 0.004, 0.006 and 0.008 M) in SnS by solvothermal method at a reaction temperature of 170 degrees C for a much reduced period of 90 min. The effect of Fe as a dopant on the phase purity, surface morphology, direct energy band gap and electrical resistivity of SnS is discussed in detail. Phase pure SnS formation is attained up to 6 % doping of Fe 3+ at the cationic Sn 2+ sites, whereas trivial formation of Sn 2 S 3 as a secondary phase is observed along with SnS for SnS:Fe 8 % as evident from Raman, XRD, XPS and SAED analyses. Morphological studies showed the disruption of well-defined SnS nanorods upon the incorporation of Fe. The variations in direct energy band gap is well correlated with the effect of doping which in turn tuned the electrical transport properties of SnS without affecting its p -type conductivity.

引用

页数：9

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