Physical Study of Low-frequency TDDB Lifetime Deterioration in Advanced FinFETs

被引:0
作者
Yan, Chu [1 ,2 ]
Ding, Yaru [1 ,2 ]
Qu, Yiming [3 ]
Zhao, Yi [1 ,2 ,4 ]
机构
[1] Zhejiang Univ, Coll Informat Sci & Elect Engn, Hangzhou 310027, Peoples R China
[2] Zhejiang Univ, Int Joint Innovat Ctr, Haining 314400, Peoples R China
[3] East China Normal Univ, Sch Integrated Circuits, Shanghai 200241, Peoples R China
[4] Zhejiang Univ, State Key Lab Silicon & Adv Semicond Mat, Hangzhou 310027, Peoples R China
来源
2024 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, IRPS 2024 | 2024年
关键词
TDDB; FinFET; dielectric;
D O I
10.1109/IRPS48228.2024.10529420
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this work, we explored the TDDB TTF (time-to-fail) deterioration of advanced n-FinFETs under low-frequency stress by analyzing the electrical parameter degradation during the stress. The dielectric relaxation of the high-k layer and Maxwell-Wagner instability of the bi-layer gate stack were analyzed. The TDDB lifetime deterioration under low frequency is physically attributable to the charges accumulated at the high-k (HK)/interfacial layer (IL) interface due to Maxwell-Wagner instability that generates additional defects in IL during the low-frequency AC TDDB stress.
引用
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页数:6
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