Enhanced performance of solid oxide fuel cells using highly conductive Ca 2+and F- co-doped Gd 0.2 Ce 0.8 O 1.9 buffer layer

被引:3
作者
Li, Shuting [1 ,2 ]
Liu, Yuanyuan [1 ,2 ,3 ]
Liu, Changyang
Xue, Ke
Bian, Liuzhen [1 ,2 ]
An, Shengli [1 ,2 ,4 ]
机构
[1] Inner Mongolia Univ Sci & Technol, Minist Educ, Key Lab Green Extract & Efficient Utilizat Light R, Baotou 014010, Peoples R China
[2] Inner Mongolia Univ Sci & Technol, Inner Mongolia Key Lab Adv Ceram Mat & Devices, Baotou 014010, Peoples R China
[3] Inner Mongolia Univ Sci & Technol, Coll Chem & Chem Engn, Baotou 014010, Peoples R China
[4] Univ Sci & Technol Beijing, Sch Met & Ecol Engn, Beijing 100083, Peoples R China
基金
中国国家自然科学基金;
关键词
Solid oxide fuel cells Ca 2+and F; co; doped GDC Buffer layer Electrochemical performance; ELECTRICAL-PROPERTIES; BARRIER LAYERS; ELECTROLYTE; DEGRADATION; INTERDIFFUSION; POLARIZATION; STABILITY; CATHODES; BEHAVIOR;
D O I
10.1016/j.jpowsour.2024.234810
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Gadolinium -doped ceria (GDC) is the most widely used buffer layer to prevent the reaction between YSZ electrolyte and La 0.6 Sr 0.4 Co 0.2 Fe 0.8 O 3- delta (LSCF) cathode for commercial solid oxide fuel cell (SOFC). However, conductivity and sintering activity are vital to cell performance. In this paper, Ca 2+ and F - co -doped GDC (Ca 0.03 Gd 0.17 Ce 0.8 F 0.06 O 1.84- delta , CGDCF) is used as a buffer layer to improve the performance and stability of SOFC. The co -doped F - and Ca 2+ significantly improve the sintering properties and oxygen ion transport of traditional GDC material. Meanwhile, the optimized sintering temperature is 1300 degrees C, with the lowest ohmic resistance. The peak power density of a cell with a CGDCF buffer layer reaches 1.809 W cm -2 at 850 degrees C, which is 37 % higher than that of GDC. In addition, the cell with the CGDCF buffer layer exhibits excellent stability during the 150 h test owing to the lower migration of La and Sr elements. Thus, the Ca 2+ and Fco -doped GDC oxide emerges as a promising material for buffer layer applications.
引用
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页数:9
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