共 51 条
Elucidating the optoelectronic properties Ag, Au and Pd doped graphene oxide using a DFT approach
被引:6
作者:
Fatima, Qawareer
[1
]
Zhang, Haiqian
[1
]
Haidry, Azhar Ali
[1
,2
]
Hussain, Riaz
[3
]
Alshgari, Razan A.
[4
]
Mohammad, Saikh
[4
]
机构:
[1] Nanjing Univ Aeronaut & Astronaut, Coll Mat Sci & Technol, Jiangjun Ave, Nanjing 211106, Peoples R China
[2] Univ Okara, Dept Phys, Okara 56300, Pakistan
[3] Univ Okara, Dept Chem, Okara 56300, Pakistan
[4] King Saud Univ, Coll Sci, Dept Chem, Riyadh 11451, Saudi Arabia
基金:
中国国家自然科学基金;
关键词:
Graphene oxide;
DFT;
Metal adsorption;
Optical properties;
Electronic properties;
TAILORED NANOSTRUCTURES;
FUNCTIONALIZED GRAPHENE;
ADSORPTION;
EFFICIENT;
NANOCOMPOSITE;
FORMALDEHYDE;
AL;
D O I:
10.1016/j.diamond.2024.111151
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
This study utilizes density functional theory (DFT) with the Lanl2dz functional to investigate the effect of silver (Ag), gold (Au) and palladium (Pd) metal adsorption on the electronic properties of graphene oxide (GO). The studied structures, which are pristine GO, Ag-GO, Au-GO, and Pd-GO, are labeled as R (reference), X1, X2, and X3, respectively. The geometrical optimization indicates that Au forms a physical bond with a carbon atom on GO with a bond length 2.169 angstrom. While, the GO exhibited an energy band gap of approximately 2.39 eV, the subsequent adsorption of metals Ag, Au and Pd leads to a decrease in the band gap, with values of 2.07 eV for X1, 2.16 eV for X2, and 2.28 eV for X3. Further analysis reveals significant differences in the electronic properties of the various materials. Compared to the dipole moment of R (similar to 8.66 D), the dipole moment of X1-X3 ranged from 2.55 D to 6.11 D, which is lower than R. Our study reveals a modification in the charge distribution within the molecules upon metal adsorption. Interestingly, the open circuit voltage (V OC ) exhibits a trend where X2 (1.72 eV) > R (1.16 eV) > X3 (0.95 eV) > X1 (0.54 eV). These findings highlight the crucial role of dopant selection in tuning the optoelectronic properties of GO. By carefully choosing dopants, we can optimize the optoelectronic properties of GO, making it suitable for various applications, including solar energy conversion.
引用
收藏
页数:10
相关论文