Tunneling electron induced luminescence from indium films on Si(111)

被引：0
作者：
Kuroishi, Kenta [1 ]
Okuyama, Hiroshi [1 ]
Hatta, Shinichiro [1 ]
Aruga, Tetsuya [1 ]
机构：
[1] Kyoto Univ, Grad Sch Sci, Dept Chem, Kyoto 6068502, Japan
来源：
PHYSICAL REVIEW B | 2024年 / 109卷 / 23期
关键词：
QUANTUM-WELL STATES; THIN METAL-FILMS; STM LIGHT-EMISSION; PHOTON-EMISSION; SURFACE; BAND; RESONANCES; GOLD;
D O I：
10.1103/PhysRevB.109.235410
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We investigated the growth, electronic states, and tunneling electron induced luminescence of In ultrathin films on Si(111) using scanning tunneling microscopy (STM). The In films (4-8 monolayers) grew layer by layer by deposition at similar to 100 K. The dI/dVs spectra exhibited the quantum-well states confined in the films. We observed luminescence originating from the junction plasmon excited via electron tunneling into the quantum-well state. Thus, by adjusting the thickness of the film at a single-layer level, we were able to modify the photon emission from the STM junction.
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页数：6
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