Effect of hydrogen treatment on 4H-SiC Schottky barrier diodes

被引：0

作者：

Chen, Zihe ^{[1
]}

Liu, Ling ^{[1
]}

Sun, Yunlong ^{[1
]}

Li, Gang ^{[1
]}

Yan, Shaoan ^{[2
]}

Xiao, Yongguang ^{[1
]}

Tang, Minghua ^{[1
]}

Li, Zheng ^{[3
]}

机构：

[1] Xiangtan Univ, Sch Mat Sci & Engn, Xiangtan 411105, Peoples R China

[2] Xiangtan Univ, Sch Mech Engn, Xiangtan 411105, Peoples R China

[3] Ludong Univ, Yantai 264025, Peoples R China

来源：

PHYSICA SCRIPTA | 2024年 / 99卷 / 08期

基金：

中国国家自然科学基金;

关键词：

4H-SiC; Schottky barrier diodes (SBDs); hydrogen treatment; interface state density; hydrogen diffusion; SILICON-CARBIDE; PASSIVATION; DEGRADATION; ACCEPTORS; TRANSPORT; DESIGN;

D O I：

10.1088/1402-4896/ad6220

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

In this letter, 4H-SiC Schottky barrier diodes (SBDs) with Ti Schottky metal have been subjected to hydrogen treatment in a confined environment of 4% H2 and 96% N2 at 150 degrees C. The effect of hydrogen treatment on the SBDs electrical characteristics has been investigated by technical computer-aided design simulation (TCAD) and power device analyzer curve tracer. The change of electrical parameters of SBDs measured after hydrogen treatment is studied in detail, and the related degradation mechanism is discussed. It was found that hydrogen treatment affected both the interface region and bulk region of SiC SBDs. After hydrogen treatment, the Schottky barrier increases slightly, the ideal factor (n) decreases slightly, and the interfacial state density (D it) decreases. Hydrogen treatment resulted in a slight reduction in specific on-resistance (R on-sp), which was attributed to the diffusion of H in SBDs. Through TCAD simulation, it is determined that the diffusion of H in the body diode of SBDs is the main reason for the degradation of high forward current and high reverse voltage characteristics.

引用

页数：9

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