Silicon-Based 850 nm GaAs/GaAsP-Strained Quantum Well Lasers with Active Region Dislocation Blocking Layers

被引:3
作者
Li, Jian [1 ,2 ]
Jiang, Chen [3 ,4 ]
Liu, Hao [3 ,4 ]
Zhang, Yang [1 ,2 ]
Zhai, Hao [3 ,4 ]
Wei, Xin [1 ,2 ]
Wang, Qi [3 ,4 ]
Wu, Gang [1 ,2 ]
Li, Chuanchuan [1 ,2 ]
Ren, Xiaomin [3 ,4 ]
机构
[1] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China
[2] Univ Acad Sci, Coll Mat Sci & Optoelect Technol, Beijing 100049, Peoples R China
[3] Beijing Univ Posts & Telecommun, State Key Lab Informat Photon & Opt Commun, Beijing 100876, Peoples R China
[4] BUPT HTGD Joint Lab Quantum Optoelect & Bivergentu, Beijing 100876, Peoples R China
来源
ADVANCED PHOTONICS RESEARCH | 2024年 / 5卷 / 07期
基金
中国国家自然科学基金; 国家重点研发计划;
关键词
III-V heteroepitaxy on Si; dislocation filtering; quantum well lasers; reliability; CHEMICAL-VAPOR-DEPOSITION; MOLECULAR-BEAM EPITAXY; DOT LASERS; GAAS/ALGAAS LASERS; SI; GAAS; OPERATION; INTEGRATION; REDUCTION; DIODES;
D O I
10.1002/adpr.202300348
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A silicon-based room temperature (RT) continuous wave (CW) operation quantum well (QW) laser emitting at 850 nm is reported in this article. By applying the dislocation filter superlattice, the threading dislocation density of the GaAs pseudosubstrate on Si is reduced to 1.8 x 107 cm-2. The metal-organic chemical vapor deposition-grown laser structure with GaAs/GaAsP QW and InAlAs active region dislocation blocking layer are fabricated into broad-stripe Fabry-Perot laser diodes. A typical threshold current and threshold current density of 286 mA and 715 Acm-2 are obtained with 2 mm cavity length and 20 um stripe width samples. A 94.2 mW single-facet output power lasing around 854 nm and a 0.314 WA-1 slope efficiency is measured under RT CW operation. After a 10-min aging process, the tested laser can operate stably under continuous operation conditions at RT and the lifetime can be approximated using an exponential fitting curve, indicating a good life reliability of this QW laser. An 850 nm room temperature continuous wave emitting silicon-based quantum well (QW) laser is reported in this article. Benefiting from the interaction of the GaAs/GaAsP-strained QW and InAlAs active region dislocation blocking layer, the threading dislocation penetration to the QW region is blocked. The laser exhibits a 94.2 mW output power, a 715 Acm-2 threshold current density, and enhanced reliability.image (c) 2024 WILEY-VCH GmbH
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页数:9
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