Total-Ionizing-Dose Effects in IGZO Thin-Film Transistors With SiO2 Oxygen-Penetration Layers

被引：3

作者：

Guo, Zixiang ^{[1
]}

Zhang, En Xia ^{[1
]}

Chasin, A. ^{[2
]}

Linten, D. ^{[2
]}

Belmonte, A. ^{[2
]}

Kar, G. ^{[2
]}

Reed, Robert A. ^{[1
]}

Schrimpf, Ronald D. ^{[1
]}

Fleetwood, Daniel M. ^{[1
]}

机构：

[1] Vanderbilt Univ, Dept Elect & Comp Engn, Nashville, TN 37235 USA

[2] imec, B-3001 Leuven, Belgium

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2024年 / 71卷 / 04期

关键词：

Logic gates; Dielectrics; Radiation effects; Hysteresis; Thin film transistors; Annealing; Temperature measurement; Indium gallium zinc oxide; thin-film transistors (TFTs); total ionizing dose (TID); LOW-FREQUENCY NOISE; BORDER TRAPS; INGAAS FINFETS; RADIATION RESPONSE; OXIDE; BIAS; DEGRADATION; DEPENDENCE; INTERFACE; MOSFETS;

D O I：

10.1109/TNS.2023.3346825

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Total-ionizing-dose (TID) effects are evaluated in top-gated IGZO thin-film transistors (TFTs) irradiated with different gate biases. Negative-bias irradiation leads to worst case degradation of TID response, primarily due to enhanced charge trapping in the SiO2 insulator that underlies the IGZO channel and serves as an oxygen-penetration layer during device processing. TID response comparisons with back-gated devices indicate that hydrogen also plays an important role in the observed degradation of top-gated devices. The source of this hydrogen is most likely SiN oxygen blocking layers. Comparisons with other display and alternative-channel MOS technologies illustrate that further optimization should enable the use of IGZO in future space applications.

引用

页码：461 / 468

页数：8

共 47 条

[1] Circuit-Level Impact of a-Si:H Thin-Film-Transistor Degradation Effects [J].

Allee, David R. ;

Clark, Lawrence T. ;

Vogt, Bryan D. ;

Shringarpure, Rahul ;

Venugopal, Sameer M. ;

Uppili, Shrinivas Gopalan ;

Kaftanoglu, Korhan ;

Shivalingaiah, Hemanth ;

Li, Zi P. ;

Fernando, J. J. Ravindra ;

Bawolek, Edward J. ;

O'Rourke, Shawn M. .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2009, 56 (06) :1166-1176

[2] Capacitor-less, Long-Retention (>400s) DRAM Cell Paving the Way towards Low-Power and High-Density Monolithic 3D DRAM [J].

Belmonte, A. ;

Oh, H. ;

Rassoul, N. ;

Donadio, G. L. ;

Mitard, J. ;

Dekkers, H. ;

Delhougne, R. ;

Subhechha, S. ;

Chasin, A. ;

van Setten, M. J. ;

Kljucar, L. ;

Mao, M. ;

Puliyalil, H. ;

Pak, M. ;

Teugels, L. ;

Tsvetanova, D. ;

Banerjee, K. ;

Souriau, L. ;

Tokei, Z. ;

Goux, L. ;

Kar, G. S. .

2020 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2020,

[3] HOLE REMOVAL IN THIN-GATE MOSFETS BY TUNNELING [J].

BENEDETTO, JM ;

BOESCH, HE ;

MCLEAN, FB ;

MIZE, JP .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1985, 32 (06) :3916-3920

[4] Total-Ionizing-Dose Effects and Low-Frequency Noise in 16-nm InGaAs FinFETs With HfO2/Al2O3 Dielectrics [J].

Bonaldo, Stefano ;

Putcha, Vamsi ;

Linten, Dimitri ;

Pantelides, Sokrates T. ;

Reed, Robert A. ;

Schrimpf, Ronald D. ;

Fleetwood, Daniel M. ;

Zhao, Simeng E. ;

O'Hara, Andrew ;

Gorchichko, Mariia ;

Zhang, En Xia ;

Gerardin, Simone ;

Paccagnella, Alessandro ;

Waldron, Niamh ;

Collaert, Nadine .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2020, 67 (01) :210-220

[5] Understanding and modelling the PBTI reliability of thin-film IGZO transistors [J].

Chasin, A. ;

Franco, J. ;

Triantopoulos, K. ;

Dekkers, H. ;

Rassoul, N. ;

Belmonte, A. ;

Smets, Q. ;

Subhechha, S. ;

Claes, D. ;

van Setten, M. J. ;

Mitard, J. ;

Delhougne, R. ;

Afanas'ev, V ;

Kaczer, B. ;

Kar, G. S. .

2021 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2021,

[6] Flexible IGZO TFTs and Their Suitability for Space Applications [J].

Costa, Julio C. ;

Pouryazdan, Arash ;

Panidi, Julianna ;

Spina, Filippo ;

Anthopoulos, Thomas D. ;

Liedke, Maciej O. ;

Schneider, Christof ;

Wagner, Andreas ;

Munzenrieder, Niko .

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2019, 7 (01) :1182-1190

[7] Defects in Amorphous Semiconductors: The Case of Amorphous Indium Gallium Zinc Oxide [J].

de Meux, A. de Jamblinne ;

Pourtois, G. ;

Genoe, J. ;

Heremans, P. .

PHYSICAL REVIEW APPLIED, 2018, 9 (05)

[8] Bias Dependence of Total Ionizing Dose Effects in SiGe-SiO2/HfO2 pMOS FinFETs [J].

Duan, Guo Xing ;

Zhang, Cher Xuan ;

Zhang, En Xia ;

Hachtel, Jordan ;

Fleetwood, Daniel M. ;

Schrimpf, Ronald D. ;

Reed, Robert A. ;

Alles, Michael L. ;

Pantelides, Sokrates T. ;

Bersuker, Gennadi ;

Young, Chadwin D. .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2014, 61 (06) :2834-2838

[9] Interface traps, correlated mobility fluctuations, and low-frequency noise in metal-oxide-semiconductor transistors [J].

Fleetwood, D. M. .

APPLIED PHYSICS LETTERS, 2023, 122 (17)

[10] Radiation Effects in a Post-Moore World [J].

Fleetwood, Daniel M. .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2021, 68 (05) :509-545

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