Effect of sputtering pressure on the properties of large area IWO thin films deposited by direct current magnetron sputtering

被引：2
|
作者：
Yu, Tianyu [1 ]
Jiang, Yunlei [1 ]
Liang, Suxia [1 ]
Zhao, Zhiguo [2 ]
Zou, Sheng [1 ,3 ]
Su, Jie [1 ,3 ]
Hua, Renjie [1 ,3 ]
Liang, Cang [1 ,3 ]
Chen, Wangfan [1 ,3 ]
Zhang, Mi [1 ,3 ]
Zhang, Wenjun [4 ]
Shi, Lei [4 ]
Dong, Yuan [1 ,3 ]
机构：
[1] Hangzhou Dianzi Univ, Sch Mech Engn, Hangzhou 310018, Peoples R China
[2] China Huaneng Grp Co Ltd, Beijing 100031, Peoples R China
[3] Hangzhou Dianzi Univ, Yangtze River Delta Huzhou Ind Cooperat Zone Inst, Anji 313300, Huzhou, Peoples R China
[4] Hangzhou Zhongneng Photoeletr Technol Co Ltd, Hangzhou 310018, Peoples R China
来源：
CURRENT APPLIED PHYSICS | 2024年 / 64卷
关键词：
IWO; Magnetron sputtering; Optoelectronic properties; Sputtering pressure; ST-PSCs; OXIDE-FILMS; ROOM-TEMPERATURE; TIN OXIDE;
D O I：
10.1016/j.cap.2024.05.006
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Tungsten doped indium oxide (In2O3: W, IWO) thin films have been attracting increasing attention due to their excellent optoelectronic properties. Here, a series of IWO thin films were prepared using direct current (DC) magnetron sputtering method, by varying the sputtering pressure. Analysis revealed that the IWO films prepared under sputtering pressure of 0.4 Pa exhibited excellent optoelectronic performance, with low square resistance, resistivity, high carrier concentration and mobility. The resulting semi-transparent perovskite solar cells (STPSCs), with IWO fabricated under 0.4 Pa, yield a PCE of 15.71 % for the large area modules of 100 cm2 (active area 64.8 cm2).
引用
收藏
页码：1 / 7
页数：7
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