Ti-doped zigzag blue phosphorene nanoribbons for perfect spin filtering, giant magnetoresistance and rectification behavior

被引:0
作者
Wang, Rigao [1 ,2 ]
Wei, Xiangfu [3 ]
Shuang, Feng [1 ,2 ]
Fang, Zheng [3 ]
She, Duan [4 ]
Shi, Xiaowen [5 ]
Chen, Mingyan [5 ]
机构
[1] Guangxi Univ, Sch Elect Engn, Nanning 530004, Peoples R China
[2] Guangxi Univ, Guangxi Key Lab Intelligent Control & Maintenance, Nanning 530004, Peoples R China
[3] Guangxi Vocat & Tech Coll Commun, Nanning 530023, Peoples R China
[4] Henan Acad Sci, Inst Phys, Zhengzhou 450046, Peoples R China
[5] Hongzhiwei Technol Shanghai Co Ltd, 1599 Xinjinqiao Rd, Shanghai 201206, Peoples R China
基金
中国国家自然科学基金;
关键词
Zigzag blue phosphorene (ZblueP); Spin-filtering efficiencies (SFEs); Giant magnetoresistance (GMR); Density functional theory (DFT); Rectification ratio (RR); MAGNETIC-PROPERTIES; GRAPHENE; BLACK; TRANSPORT;
D O I
10.1016/j.mssp.2024.108550
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this study, we employed density functional theory (DFT) and the nonequilibrium Green's function (NEGF) framework to examine the quantum transport properties of Ti-doped zigzag blue phosphorene (ZblueP) nanoribbons at various doping levels. Our objective was to investigate the structural stability, electronic, and transport characteristics of our models. Interestingly, we discovered that doping engineering techniques can effectively convert a monolayer (ML) of ZblueP doped with Ti into a spintronic nanodevice possessing a handful of unique transport attributes using the generalized gradient approximation (GGA) treatment. First off, our models demonstrated an high dual spin-filtering efficiencies (SFEs) at low bias. Secondly, we observed a giant magnetoresistance (GMR) of up to 1.81 x 10 5 . Lastly, we noticed a spin rectifier with a substantial rectification ratio (RR) of 1.32 x 10 7 . Our research points to a promising pathway for the advancement of high-performance ML ZblueP spintronics technology through Ti doping. Our findings suggest that the considered model holds significant potential for use in nanoscale spintronic devices.
引用
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页数:10
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