Enhancing Sensitivity in Gas Detection: Porous Structures in Organic Field-Effect Transistor-Based Sensors

被引:4
|
作者
Lim, Soohwan [1 ]
Nguyen, Ky Van [1 ]
Lee, Wi Hyoung [1 ]
机构
[1] Konkuk Univ, Sch Chem Engn, Dept Mat Sci & Engn, Seoul 05029, South Korea
关键词
organic semiconductor; organic field-effect transistors; gas sensor; sensitivity; porous structure; microstructure; THIN-FILM-TRANSISTOR; BREATH FIGURE; POLYMER-FILMS; SUB-PPM; SEMICONDUCTOR; PENTACENE; AMMONIA; THICKNESS; SOLVENT; GROWTH;
D O I
10.3390/s24092862
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
Gas detection is crucial for detecting environmentally harmful gases. Organic field-effect transistor (OFET)-based gas sensors have attracted attention due to their promising performance and potential for integration into flexible and wearable devices. This review examines the operating mechanisms of OFET-based gas sensors and explores methods for improving sensitivity, with a focus on porous structures. Researchers have achieved significant enhancements in sensor performance by controlling the thickness and free volume of the organic semiconductor layer. Additionally, innovative fabrication techniques like self-assembly and etching have been used to create porous structures, facilitating the diffusion of target gas molecules, and improving sensor response and recovery. These advancements in porous structure fabrication suggest a promising future for OFET-based gas sensors, offering increased sensitivity and selectivity across various applications.
引用
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页数:18
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