The interplay of chemical bonding and thermoelectric properties in doped cubic GeTe

被引:1
|
作者
Das, Sree Sourav [1 ]
Sadeghi, Safoura Nayeb [2 ]
Esfarjani, Keivan [2 ,3 ,4 ]
Zebarjadi, Mona [1 ,3 ]
机构
[1] Univ Virginia, Dept Elect & Comp Engn, Charlottesville, VA 22904 USA
[2] Univ Virginia, Dept Mech & Aerosp Engn, Charlottesville, VA 22904 USA
[3] Univ Virginia, Dept Mat Sci & Engn, Charlottesville, VA 22904 USA
[4] Univ Virginia, Dept Phys, Charlottesville, VA 22904 USA
基金
美国国家科学基金会;
关键词
TOTAL-ENERGY CALCULATIONS; BAND CONVERGENCE; PLANE-WAVE; ELECTRICAL-PROPERTIES; THERMAL-CONDUCTIVITY; OPTICAL-PROPERTIES; ELECTRONIC ORIGIN; PHONON-SCATTERING; PHASE-TRANSITION; HIGH-PERFORMANCE;
D O I
10.1039/d4ta01088d
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
GeTe-based alloys hold great promise for thermoelectric applications. Our comprehensive study investigates the intricate interplay between chemical bonding and transport properties in cubic GeTe. We demonstrate a balance between minimizing thermal conductivity and maximizing power factor, guided by the mediating influence of chemical bonding. Our primary findings reveal that Pb-doped GeTe exhibits low lattice thermal conductivity due to weak p-p orbital interactions, whereas In-doping boosts lattice thermal conductivity by reinforcing the chemical bonds, as elucidated by crystal orbital hamilton population (COHP) analysis. Further investigation reveals weak s-p interactions in Bi-, Sb-, and Pb-doped GeTe, and strong s-p interactions in In-doped GeTe compared to the pure GeTe, as probed by projected density of state (PDOS). These dual effects explain the experimentally observed high power factor and enhanced zT in Bi-, Sb-, and Pb- doping in contrast to In-doping. In our study, we find that weak s-p interactions improves electronic performance by modifying DOS whereas weak p-p interactions reduce thermal transport by diminishing the strength of chemical bonding. These findings underscore the correlation between doping-induced modifications in chemical bonding and resulting thermoelectric properties. Utilizing a first-principles framework, we systematically explore the temperature and carrier concentration-dependent transport properties of pure GeTe under relaxation time approximation. Optimization strategies yield a maximum peak power factor times temperature of 2.2 Wm-1 K-1 and a maximum zT value of similar to 0.83 at 800 K, showcasing the potential for tailored thermoelectric performance. Finally, this research presents a systematic approach to improve thermoelectric performance by modifying chemical bonds through doping. Our study elucidates how doping affects transport properties and chemical bonding in GeTe. Weak p-p interactions reduce thermal conductivity by weakening bonds, while favorable s-p interactions boost the power factor.
引用
收藏
页码:14072 / 14086
页数:15
相关论文
共 50 条
  • [41] Elucidating the Role of Hierarchical Bonding, Electronegativity, and Chemical Pressure on the Thermoelectric Properties of Double Half Heuslers
    Kumar, Ankit
    Ghosh, Prasenjit
    ACS APPLIED ENERGY MATERIALS, 2025, 8 (03): : 1507 - 1517
  • [42] Bonding diversity in rock salt-type tellurides: examining the interdependence between chemical bonding and materials properties
    Simons, Jasmin
    Hempelmann, Jan
    Fries, Kai S.
    Mueller, Peter C.
    Dronskowski, Richard
    Steinberg, Simon
    RSC ADVANCES, 2021, 11 (34) : 20679 - 20686
  • [43] Effective Electronic Mechanisms for Optimizing the Thermoelectric Properties of GeTe-Rich Alloys
    Hazan, Eden
    Madar, Naor
    Parag, Maya
    Casian, Vladimir
    Ben-Yehuda, Ohad
    Gelbstein, Yaniv
    ADVANCED ELECTRONIC MATERIALS, 2015, 1 (11):
  • [44] Study on the Effect of Sn, In, and Se Co-Doping on the Thermoelectric Properties of GeTe
    Guo, Tao
    Zhang, Guangbing
    Nan, Bohang
    Xu, Guiying
    Li, Shuo
    Ren, Lingling
    MATERIALS, 2024, 17 (03)
  • [45] Thermoelectric properties of Tl8GeTe5 with low thermal conductivity
    Kurosaki, Ken
    Kosuga, Atsuko
    Charoenphakdee, Anek
    Matsumoto, Hideaki
    Muta, Hiroaki
    Yamanaka, Shinsuke
    MATERIALS TRANSACTIONS, 2008, 49 (08) : 1728 - 1730
  • [46] Carrier density control and enhanced thermoelectric performance of Bi and Cu co-doped GeTe
    Shimano, S.
    Tokura, Y.
    Taguchi, Y.
    APL MATERIALS, 2017, 5 (05):
  • [47] Realization of non-equilibrium process for high thermoelectric performance Sb-doped GeTe
    Nshimyimana, Evariste
    Su, Xianli
    Xie, Hongyao
    Liu, Wei
    Deng, Rigui
    Luo, Tingting
    Yan, Yonggao
    Tang, Xinfeng
    SCIENCE BULLETIN, 2018, 63 (11) : 717 - 725
  • [48] Improvement of the thermoelectric properties of GeTe- and SnTe-based semiconductors aided by the engineering based on phase diagram
    Li, Junqin
    Liu, Fusheng
    Ao, Weiqin
    Hu, Lipeng
    Zhang, Chaohua
    INTERNATIONAL JOURNAL OF MATERIALS RESEARCH, 2022, 113 (05) : 340 - 350
  • [49] Thermoelectric properties of Sn doped BiCuSeO
    Das, Sayan
    Chetty, Raju
    Wojciechowski, Krzysztof
    Suwas, Satyam
    Mallik, Ramesh Chandra
    APPLIED SURFACE SCIENCE, 2017, 418 : 238 - 245
  • [50] Thermoelectric properties of GeTe-based composites prepared by spark plasma sintering containing Bi/Sb additive
    Zhu, Can
    Wang, Jian
    Cheng, Lin
    Zhai, Lijun
    He, Junsong
    Zhang, Yan
    Liu, Hongxia
    Sun, Zhigang
    JOURNAL OF ALLOYS AND COMPOUNDS, 2025, 1010