Negative longitudinal resistance of monolayer graphene in the quantum Hall regime

被引:1
|
作者
Kaverzin, Alexey A. [1 ,2 ]
Daimon, Shunsuke [1 ,2 ,3 ]
Kikkawa, Takashi [1 ]
Ohtsuki, Tomi [4 ]
Saitoh, Eiji [1 ,2 ,5 ]
机构
[1] Univ Tokyo, Dept Appl Phys, Tokyo 1138656, Japan
[2] Univ Tokyo, Inst AI & Beyond, Tokyo 1138656, Japan
[3] Natl Inst Quantum Sci & Technol, Quantum Mat & Applicat Res Ctr, Tokyo 1528552, Japan
[4] Sophia Univ, Phys Div, Chiyoda Ku, Tokyo 1028554, Japan
[5] Tohoku Univ, WPI Adv Inst Mat Res, Sendai 9808577, Japan
关键词
COMPOSITE FERMIONS; BALLISTIC TRANSPORT; STATES; BEND;
D O I
10.1063/5.0207235
中图分类号
O59 [应用物理学];
学科分类号
摘要
In the quantum Hall regime, the charge current is carried by ideal one-dimensional edge channels where the backscattering is prohibited by topology. This results in the constant potential along the edge of the Hall bar leading to zero 4-terminal longitudinal resistance r(xx). Finite scattering between the counter-propagating edge states, when the topological protection is broken, commonly results in r(xx) > 0. However, a local disorder, if allowing intersection of the edge states, can result in a counter-intuitive scenario when r(xx) < 0. In this work, we report the observation and a systematic study of such unconventional negative longitudinal resistance seen in an encapsulated monolayer graphene Hall bar device measured in the quantum Hall regime. We supplement our findings with the numerical calculations, which allow us to outline the conditions necessary for the appearance of negative r(xx) and to exclude the macroscopic disorder (contamination bubble) as the main origin of it.
引用
收藏
页数:5
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