Efficient, High Power, Wide-Aperture Single Emitter Diode Lasers Emitting at 915 nm

We present single emitter laser diodes with high optical output power ( P-out ), conversion efficiency ( eta(E) ), and lateral beam quality in quasi-continuous-wave (QCW) and continuous-wave (CW) operations enabled by using very wide stripe width (ranging from 400 to 1500 mu m) and laterally structured p-side contact to prevent higher order and unwanted ring modes. We show that the maximum QCW P-out increases for wider stripe and P-out of similar to 290 W (limited by facet failure) is obtained at eta(E)=60 % for 1500 mu m stripes using 500 mu s pulse width and 10Hz repetition-rate at a heatsink temperature of T-HS=25 degrees C. In contrast, the maximum CW P-out of 71W (limited by the available cooling of the test set-up) at eta(E)=59 % is obtained for 1000 mu m stripes, with lateral-beam-parameter-product (BPPLat.) < 75mm & sdot;mrad, which is suitable for coupling into 1mm core 0.15NA fiber.