Low-Noise Power-Amplifier MMICs for the WR4.3 and WR3.4 Bands in a 35-nm Gate-Length InGaAs mHEMT Technology

被引：1

作者：

Thome, Fabian ^{[1
]}

Leuther, Arnulf ^{[1
]}

机构：

[1] Fraunhofer Inst Appl Solid State Phys IAF, D-79108 Freiburg, Germany

来源：

IEEE MICROWAVE AND WIRELESS TECHNOLOGY LETTERS | 2024年 / 34卷 / 06期

关键词：

Distributed amplifiers (DAs); high-electronmobility transistors (HEMTs); low-noise amplifiers (LNAs); metamorphic HEMTs (mHEMTs); millimeter wave (mmW); monolithic microwave integrated circuits (MMICs); power amplifiers (PAs); traveling-wave amplifiers (TWAs);

D O I：

10.1109/LMWT.2024.3388320

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter presents two distributed low-noise power-amplifier (LNPA) monolithic microwave integrated circuits (MMICs). The two amplifiers (DA(1) and DA(2)) target the WR4.3 (170-260 GHz) and WR3.4 bands (220-330 GHz) as a minimum operating bandwidth (BW). The MMICs are realized in the Fraunhofer IAF 35-nm InGaAs mHEMT technology. Both amplifiers yield a small-signal gain of more than 20 dB from 110 GHz up to the corresponding upper band edges (265 and 335 GHz) and an average noise figure (NF) of 4.5 dB (110-216 GHz). Furthermore, DA(1) delivers a saturated output power ( P-sat ) of 12.4-15.2 dBm with a power-added efficiency (PAE) of 3.4%-6.2% (160-255 GHz). DA(2) exhibits a P-sat of 10-14.5 dBm (210-335 GHz). To the best of the authors' knowledge, DA(1) and DA(2) present the best NF and P-sat over the full WR4.3 and WR3.4 bands, respectively.

引用

页码：749 / 752

页数：4

共 6 条

[1] Comparison of a 35-nm and a 50-nm Gate-Length Metamorphic HEMT Technology for Millimeter-Wave Low-Noise Amplifier MMICs
Thome, Fabian
Leuther, Arnulf
Massler, Hermann
Schlechtweg, Michael
Ambacher, Oliver
2017 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS), 2017, : 748 - 751
[2] A 1-170-GHz Distributed Down-Converter MMIC in 35-nm Gate-Length InGaAs mHEMT Technology
Thome, Fabian
Wagner, Sandrine
Leuther, Arnulf
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2022, 32 (06) : 748 - 751
[3] Comparison of Two W-Band Low-Noise Amplifier MMICs with Ultra Low Power Consumption Based on 50 nm InGaAs mHEMT Technology
Thome, Fabian
Massler, Hermann
Wagner, Sandrine
Leuther, Arnulf
Kallfass, Ingmar
Schlechtweg, Michael
Ambacher, Oliver
2013 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST (IMS), 2013,
[4] A Wideband E/W-Band Low-Noise Amplifier MMIC in a 70-nm Gate-Length GaN HEMT Technology
Thome, Fabian
Brueckner, Peter
Leone, Stefano
Quay, Ruediger
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2022, 70 (02) : 1367 - 1376
[5] DC-35 GHz low-loss MMIC switch using 50 nm gate-length MHEMT technology for ultra-low-power applications
Hwang, C. -J.
Chong, H. M. H.
Holland, M.
Thayne, I. G.
Elgaid, K.
ELECTRONICS LETTERS, 2009, 45 (12) : 632 - 633
[6] DC-35 GHz low-loss MMIC switch using 50 nm gate-length MHEMT technology for ultra-low-power applications (vol 45, pg 632, 2009)
Hwang, C. -J
Chong, H. M. H.
Holland, M.
Thayne, I. G.
Elgaid, K.
ELECTRONICS LETTERS, 2009, 45 (14)

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