High electron mobility in heavily sulfur-doped 4H-SiC

The Hall electron mobility in sulfur-doped 4H-SiC over a wide range of S concentration was investigated. Sulfur (S) works as a double donor in SiC. The electron concentration in the S+-implanted layers saturates when the S concentration exceeds 1 x 10(18 )cm(-3 )and the net donor concentration of the S+-implanted layer with S concentration of 1 x 10(19) cm(-3) is 4 x 10(18) cm(-3), indicating that the solubility or activation limit of S+-implanted SiC is about 2 x 10(18) cm(-3). The S+-implanted SiC with a S concentration of 1 x 10(18) cm(-3) exhibits an electron mobility of 598 cm(2)/V s, which is more than twice as high as that in N-doped SiC with the same doping concentration (268 cm(2)/V s).The temperature dependence of the electron mobility in S+-implanted SiC is reproduced in the wide temperature range by the calculation of the electron mobility adopting the helium atom model for neutral-impurity scattering. (c) 2024 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution-NonCommercial-NoDerivs 4.0 International (CC BY-NC-ND) license (https://creativecommons.org/licenses/by-nc-nd/4.0/).