Failure analysis of heavy ion-irradiated silicon carbide junction barrier Schottky diodes

被引：1

作者：

Cao, Shuang ^{[1
]}

Yu, Qingkui ^{[1
]}

Wang, Qianyuan ^{[1
]}

Wang, He ^{[1
]}

Sun, Yi ^{[1
]}

Lv, He ^{[1
]}

Mei, Bo ^{[1
]}

Mo, Rigen ^{[1
]}

Li, Pengwei ^{[1
]}

Zhang, Hongwei ^{[1
]}

机构：

[1] China Acad Space Technol, Beijing 100029, Peoples R China

来源：

MICROELECTRONICS RELIABILITY | 2024年 / 157卷

基金：

中国国家自然科学基金;

关键词：

Silicon carbide; Radiation effects; Failure analysis;

D O I：

10.1016/j.microrel.2024.115401

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An analysis of damage, including single event burnout (SEB) and single event leakage current (SELC) caused by heavy ion irradiation in silicon carbide (SiC) junction barrier Schottky diodes (JBSDs), was performed using Auger electron spectroscopy (AES), emission microscope (EMMI), focused ion beam (FIB), transmission electron microscopy (TEM) and other methods. The damage of SEB extending from the Schottky contact through the epitaxial layer to the SiC substrate was observed. The damage causing SELC was related to the micro -burnout of the Schottky contact. It was concluded that the damage of Schottky contact was induced by incident high-energy particles under a large electric field, forming a leakage current path, resulting in SEB and SELC in the SiC device.

引用

页数：5

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