Cd-Free High-Bandgap Cu2ZnSnS4 Solar Cell with 10.7% Certified Efficiency Enabled by Engineering Sn-Related Defects

被引:3
作者
Wang, Ao [1 ]
Huang, Jialiang [1 ]
Yan, Chang [2 ,3 ]
He, Guojun [1 ]
Cui, Xin [1 ]
Yuan, Xiaojie [1 ]
Zhou, Shujie [4 ]
He, Mingrui [1 ]
Qiu, Tianyun [1 ]
Zhao, Chenghan [1 ]
Green, Martin A. [1 ]
Sun, Kaiwen [1 ]
Hao, Xiaojing [1 ]
机构
[1] Univ New South Wales, Australian Ctr Adv Photovolta, Sch Photovolta & Renewable Energy Engn, Sydney, NSW 2052, Australia
[2] Hong Kong Univ Sci & Technol Guangzhou, Sustainable Energy & Environm Thrust, Guangzhou 511400, Guangdong, Peoples R China
[3] Jiangmen Lab Carbon Sci & Technol, Guangdong Hong Kong Joint Lab Carbon Neutral, Jiangmen 529199, Guangdong, Peoples R China
[4] Univ New South Wales, Sch Chem Engn, Sydney, NSW 2052, Australia
基金
澳大利亚研究理事会; 中国国家自然科学基金;
关键词
Cd-free; CZTS; defects engineering; kesterite; KESTERITE; CZTS; NANOCOMPOSITE; PASSIVATION; TEMPERATURE; ORIGIN;
D O I
10.1002/adfm.202407063
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Cd-free high-bandgap Cu2ZnSnS4 (CZTS) solar cells are expected to offer green and low-cost solutions to single-junction and tandem photovoltaic markets. Despite attracting considerable attention in past years, reported certified efficiency has yet to exceed the 10% threshold. Sn-related defects, especially those originating from Sn2+ oxidation states, lead to severe recombination loss and limit device performance. Here, the formation of these detrimental defects is suppressed by creating a more benign chemical environment during sulfurization annealing. With dominant Sn4+ states in the source material and the precursor, the oxidation state of Sn remains primarily in its native Sn4+ state during annealing and in the final film. Engineering the Sn-related defects leads to shallower tail states in bulk CZTS and fewer interfacial defects. As a result, both radiative and non-radiative recombination losses are alleviated, contributing to a certified 10.7% efficiency of the Cd-free high-bandgap CZTS solar cell. This strategy may advance various kesterite materials and other technologies with multivalent constituents.
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页数:8
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