Unveiling interface engineering dynamics between Ti and Ga2O3 nanowire

被引：3

作者：

Hsieh, Ping -Wen ^{[1
]}

Chi, Chong -Chi ^{[2
]}

Wu, Che-Ming ^{[1
]}

Hsiao, Kai -Yuan ^{[1
]}

Lu, Ming-Yen ^{[1
,2
,3
]}

机构：

[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu, Taiwan

[2] Natl Tsing Hua Univ, Instrumentat Ctr, Hsinchu 300, Taiwan

[3] Natl Tsing Hua Univ, Coll Semicond Res, Hsinchu 300, Taiwan

来源：

APPLIED SURFACE SCIENCE | 2024年 / 670卷

关键词：

in situ TEM observation; Diffusion; Ohmic contact; Ga- 2 O (3); Intermetallic compounds; BETA-GA2O3; NANOWIRES; SEMICONDUCTORS; (2)OVER-BAR01;

D O I：

10.1016/j.apsusc.2024.160612

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

In this study, we investigate the interfacial reactions between Ga2O3 nanowires (NWs) and Ti contacts during annealing processes through in-situ transmission electron microscopy (TEM) observations. A thin Ga3Ti2 intermetallic compound was observed to form at the Ti/Ga2O3 interface, coinciding with a transition in the NW device's contact behavior from Schottky to ohmic upon annealing at 470 degrees C. Utilizing in-situ TEM, we monitored the evolution of the Ga3Ti2 layer, revealing Ga atoms as the primary diffusing species within the Ga2O3 NW, evidenced by asymmetric diffusion at the interface. Ga3Ti2 intermetallic compound effectively reducing the energy barrier between Ga2O3 NW and Ti electrode, contributing to linear electrical transport characteristics. This investigation underscores the significance of interface engineering and offers valuable insights for future electronic applications utilizing Ga2O3 NWs.

引用

页数：7

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