Nanoscale Operando Imaging of Electrically Driven Charge-Density Wave Phase Transitions

被引:0
作者
Domroese, Till [1 ,2 ]
Fernandez, Noelia [3 ]
Eckel, Christian [3 ]
Rossnagel, Kai [4 ,5 ]
Weitz, R. Thomas [3 ,6 ]
Ropers, Claus [1 ,2 ]
机构
[1] Max Planck Inst Multidisciplinary Sci, Dept Ultrafast Dynam, D-37077 Gottingen, Germany
[2] Univ Gottingen, Phys Inst Solids & Nanostruct 4, D-37077 Gottingen, Germany
[3] Univ Gottingen, Inst Phys 1, D-37077 Gottingen, Germany
[4] Univ Kiel, Inst Expt & Appl Phys, D-24098 Kiel, Germany
[5] Deutsch Elektronen Synchrotron DESY, Ruprecht Haensel Lab, D-22607 Hamburg, Germany
[6] Univ Gottingen, Int Ctr Adv Studies Energy Convers ICASEC, D-37077 Gottingen, Germany
关键词
structural phase transformations; strongly correlatedmaterials; charge-density waves; transmission electronmicroscopy; nanoscale operando imaging; electrically induced phase transitions; IN-SITU; ELECTRON-MICROSCOPY; MONOLAYER; 1T-TAS2; CRYSTALLIZATION; OPTOELECTRONICS; SUPERLATTICES; TEMPERATURE; DYNAMICS; CONTRAST;
D O I
10.1021/acs.nanolett.4c03324
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Structural transformations in strongly correlated materials promise efficient and fast control of materials' properties via electrical or optical stimulation. The desired functionality of devices operating based on phase transitions, however, will also be influenced by nanoscale heterogeneity. Experimentally characterizing the relationship between microstructure and phase switching remains challenging, as nanometer resolution and high sensitivity to subtle structural modifications are required. Here, we demonstrate nanoimaging of a current-induced phase transformation in the charge-density wave (CDW) material 1T-TaS2. Combining electrical characterizations with tailored contrast enhancement, we correlate macroscopic resistance changes with the nanoscale nucleation and growth of CDW phase domains. In particular, we locally determine the transformation barrier in the presence of dislocations and strain, underlining their non-negligible impact on future functional devices. Thereby, our results demonstrate the merit of tailored contrast enhancement and beam shaping for advanced operando microscopy of quantum materials and devices.
引用
收藏
页码:12476 / 12485
页数:10
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