Study and Optimization of a New Perovskite Solar Cell Structure Based on the Two Absorber Materials Cs 2 TiBr 6 and MASnBr 3 Using SCAPS 1D

被引:5
作者
Dris, Keltoum [1 ,2 ]
Benhaliliba, Mostefa [1 ]
机构
[1] Univ Sci & Technol Mohamed Boudiaf USTOMB, FDFCA Res Grp, Film Device Fabricat Characterizat & Applicat, POB 1505, Oran 31130, Algeria
[2] Univ Sci & Technol Mohamed Boudiaf USTOMB, Lab Etud Phys Materiaux, POB 1505, Oran 31000, Algeria
关键词
perovskite solar cell; power conversion efficiency; MASnBr; 3; Cs; 2; TiBr; 6; optimization;
D O I
10.3311/PPch.36825
中图分类号
TQ [化学工业];
学科分类号
0817 ;
摘要
The main objective of this study is to optimize the photovoltaic parameters of a new perovskite solar cell structure (PSC) suggested, using the simulator solar cell capacitance simulator-one dimension (SCAPS-1D) which aims to improve its performance by adjusting different key variables. This new suggested cell which consists of six materials represents the major innovation point of our research, it is distinguished by a double active layer, composed of the two-cesium titanium hexabromide (Cs 2 TiBr 6 ) and methylammonium tin tribromide (MASnBr 3 ) perovskites. Using the SCAPS 1D software, the simulation allows to determine the optimal values of the various parameters to maximize the efficiency of the PSC. First, the effect of the thickness and defect densities of both Cs 2 TiBr 6 and MASnBr 3 materials on the output parameters was studied as well as the defect density in the interfaces. Subsequently, the doping density in Cs 2 TiBr 6 and MASnBr 3 was also optimized. Finally, the impact of temperature, series resistance and shunt resistance were evidenced. The results indicate that precise adjustments of these parameters can lead to significant improvements in photovoltaic performance, such as open circuit voltage of 1.105 V, short-circuit current density of 33.90 mA cm -2 , fill factor of 88.01% and power conversion efficiency (PCE) 32.96%. These performances were obtained for a thickness of 700 nm for Cs 2 TiBr 6 and 900 nm for MASnBr 3 , a defect density of 10 14 cm -3 for each absorber layer, a defect density of 10 14 cm -2 for each interface and a doping density of the order of 10 18 cm -3 for each absorbent layer.
引用
收藏
页码:348 / 363
页数:16
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