Exploring the effects of a one-dimensional periodic potential on a three-dimensional topological insulator

High mobility two-dimensional systems with superposed 1D lateral periodic potentials exhibit characteristic commensurability (Weiss) oscillations that reflect the interplay of the cyclotron radius at the Fermi level and the superlattice period. Here, we impose a one-dimensional periodic potential on strained HgTe, which is a strong 3D topological insulator. By tuning the Fermi level with top gates, the effects of the artificial potential can be studied in the bulk gap, where only Dirac surface states exist, in the conduction band, and in the valence band, where Dirac electrons and holes coexist. On the electron side, we observe clear commensurability oscillations whose period is governed by the carrier density of the top -surface Dirac electrons. Unexpectedly, weak commensurability oscillations are also observed in the valence band with a period that depends on both electron and hole density.