Memristive synapses based on SrTiO3 thin film

With the research on brain-inspired intelligence, the development of highly efficient and low-power artificial synapses has become the key to solve the development bottleneck. In this paper, Au/SrTiO3/FTO (STO) structured memristor were prepared by sol-gel method, and the microstructure and electrical properties of STO device were tested and investigated. The biological synaptic properties of STO device were simulated by voltage pulse tests, and the existing short-term plasticity, long-term plasticity, paired-pulse depression (PPD), and spike- timing-dependent plasticity (STDP), were analyzed. It was found that STO device realized the essential function of the memristor. STO device exhibits significant STDP effects, with a maximum change rate of 50.5 % in conductivity. This effect remained significant even at a 1.4 s interval; the rate of change of STO device positive bias was 20.2 %, and negative bias was 10.3 %, demonstrating that it could be applied to a wider bandwidth range.