Electronic heat capacity in bilayer P6 mmm borophene: Effects of a perpendicular electric field, excitonic effects, and dopants

被引:0
|
作者
Phong, Tran Cong [1 ,2 ]
My, Bui T. K. [3 ,4 ]
Long, Hoang D. [5 ]
Nam, Nguyen T. [6 ]
Phuong, Le T. T. [5 ]
机构
[1] Ton Duc Thang Univ, Inst Adv Study Technol, Atom Mol & Opt Phys Res Grp, Ho Chi Minh City, Vietnam
[2] Ton Duc Thang Univ, Fac Elect & Elect Engn, Ho Chi Minh City, Vietnam
[3] Duy Tan Univ, Inst Res & Dev, Da Nang 550000, Vietnam
[4] Duy Tan Univ, Fac Nat Sci, Da Nang 550000, Vietnam
[5] Hue Univ, Univ Educ, Fac Phys, Hue 530000, Vietnam
[6] Hanoi Univ Civil Engn, Fac Mech Engn, Dept Phys, Hanoi, Vietnam
关键词
Tight-binding model; Bilayer borophene; Electronic heat capacity; Electric field; Excitonic effects; External dopants; 2-DIMENSIONAL BORON; LI-ION; NA; IMPURITY; GRAPHENE; MG;
D O I
10.1016/j.physb.2024.415943
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
In this work, we aim to control the electronic heat capacity (EHC) of bilayer P6 mmm borophene through a perpendicular electric field, excitonic effects, and external dopants. To achieve this, we employ the tightbinding model within a semi-classical framework. Our findings reveal a decrease in EHC under all stimuli due to decreased total electronic states in the system, while the coexistence of electric field and excitonic effects leads to an enhancement of EHC in the strong regime. Additionally, our study highlights a shift in the Schottky anomaly peak at low temperatures only in the strong regime of stimuli. This study is crucial for the design of thermoelectric materials based on borophene.
引用
收藏
页数:7
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