Synthesis and characterization of Ga2O3 nanoparticles for electronic device applications

Gallium oxide (Ga2O3) exhibits a bandgap of 4.5 to 4.9 eV, making it a promising semiconductor for various device applications. Ga2O3 nanoparticles were synthesized via the solution combustion method to study its structural, electrical, dielectric, and elasto-mechanical properties. X-ray diffraction data were used for Rietveld refinement, showing that synthesized beta-Ga2O3 belongs to the monoclinic crystal system with lattice parameters a = 12.22 ?, b = 3.04 ?, c = 5.81 ?, and beta = 103.85 degrees. Using the Scherrer equation, the crystallite size was determined to be 36 nm. First principle calculations were used to determine and plot the crystallite size along three-dimensional crystallographic axes. Utilizing a 6 x 6 tensor matrix and ELATE, elastic moduli computation showed isotropic linear compressibility while other moduli demonstrated anisotropic behaviour. The sample's dielectric properties such as capacitance, dielectric constant, dielectric loss, and ac conductivity are studied at different temperatures in the frequency range 50 Hz to 5 MHz.