Memristor Based on Silk Fibroin and Graphene Oxide Blend for Electrical and Optical Synaptic Behavior

Memristors hold significant promise in data storage and synaptic performance bionics. This work presents a memory structure based on silk fibroin (SF), demonstrating remarkable stability (up to 10(4) s) and capacitance effect (ON/OFF ratio of 10(3)). By introducing graphene oxide (GO) to increase its oxygen vacancy concentration and weaken its capacitance effect, the SF:GO memristor has a 10(3) ON/OFF ratio. Utilizing the inherent similarity between memristors and synaptic structures, we simulate long-term plasticity and paired-pulse facilitation of synaptic behavior by applying electrical pulses. Moreover, we introduce light pulses using 365 nm ultraviolet light, revealing that the device exhibits synaptic behavior in response to light stimuli. Finally, a Pavlov conditioned reflex was performed on the device using light and electrical pulses. This discovery holds significant potential for future studies exploring synaptic behavior in the field of biology.