Architecture for Surface-Emitting Lasers with On-Demand Lasing Wavelength by Nanowire Optical Cavities

被引:4
作者
Vafadar, Mohammad Fazel [1 ]
Zhao, Songrui [1 ]
机构
[1] McGill Univ, Dept Elect & Comp Engn, Montreal, PQ H3A 0E9, Canada
基金
加拿大自然科学与工程研究理事会;
关键词
surface-emitting laser; lasing wavelengthon demand; electrical injection; ultraviolet; epitaxialnanowire photonic crystal; PHOTOLUMINESCENCE BANDS; TUNNEL-JUNCTION; GAN; DIODES;
D O I
10.1021/acsnano.3c13186
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Despite the importance and exciting progress of surface-emitting (SE) semiconductor lasers, we have limited choices of lasing wavelength even today. From an application viewpoint, it is desirable to have an architecture that can allow SE lasing in a wide spectral range, based on the need of applications. Herein, we demonstrate a path for SE lasers with lasing wavelength on demand by exploiting III-nitride nanowire optical cavities formed by low-temperature selective area epitaxy (SAE), combined with fine-tuning of substrate patterns and photonic bands. Moreover, in this study, we focus on the device demonstration in the ultraviolet (UV) spectral range, considering the severe lag in developing SE lasers in the UV wavelength range compared to longer wavelengths, e.g., near-infrared (NIR), as well as the potential applications enabled by UV lasers such as solar blind optical wireless communications. Ultralow threshold wavelength-tunable SE UV lasing is achieved by optical pumping. Moreover, SE UV lasing under direct electric current injection is also achieved. This study not only represents an important step in the journey of SE UV laser development but, more importantly, it lays the ground for SE lasers with lasing wavelength on demand, broadly from NIR to UV.
引用
收藏
页码:14290 / 14297
页数:8
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