To date, charging time remains a critical issue that impedes the widespread application of lithium-ion batteries (LIBs). A comprehensive understanding of the attenuation mechanism of LIBs at high (dis)charging rates is essential for clarifying application strategies for extreme operating conditions and environments, thereby enhancing battery control, and guiding the design of advanced batteries with superior rate capability. In line with this focus, particular commercial NCM/graphite batteries were explored under various high-rate (dis) charging procedures, alongside the investigation of the impact of constant voltage steps on battery performance. This exploration revealed that capacity degradation occurs in three stages, and the rate of capacity decay is directly proportional to the (dis)charging rate. Furthermore, the in-situ temperature and stress of the battery during cycling, primarily caused by side reactions, were monitored to confirm the thermal effects and stress variations under high-rate conditions. By characterizing the morphology and composition of the electrode surface after post-mortem analysis, the "barrel effect" of high-rate capability determined by the anode electrode for LIBs is proposed. This research aims to establish optimal guidelines for designing batteries with excellent highrate properties and to provide solutions for improving the safety and reliability of batteries applied in high-rate conditions.
机构:
Samsung SDI Co Ltd, Dev Team, Cheonan Si 330300, Chungcheongnam, South KoreaSamsung SDI Co Ltd, Dev Team, Cheonan Si 330300, Chungcheongnam, South Korea
Back, Chang Keun
Yin, Ri-Zhu
论文数: 0引用数: 0
h-index: 0
机构:
Samsung SDI Co Ltd, R&D Ctr, Cheonan Si 330300, Chungcheongnam, South KoreaSamsung SDI Co Ltd, Dev Team, Cheonan Si 330300, Chungcheongnam, South Korea
Yin, Ri-Zhu
Shin, Se-Jong
论文数: 0引用数: 0
h-index: 0
机构:
Samsung SDI Co Ltd, R&D Ctr, Cheonan Si 330300, Chungcheongnam, South KoreaSamsung SDI Co Ltd, Dev Team, Cheonan Si 330300, Chungcheongnam, South Korea
Shin, Se-Jong
Lee, Yoon-Soo
论文数: 0引用数: 0
h-index: 0
机构:
Samsung SDI Co Ltd, R&D Ctr, Cheonan Si 330300, Chungcheongnam, South KoreaSamsung SDI Co Ltd, Dev Team, Cheonan Si 330300, Chungcheongnam, South Korea
Lee, Yoon-Soo
Choi, Wanuk
论文数: 0引用数: 0
h-index: 0
机构:
Samsung SDI Co Ltd, Dev Team, Cheonan Si 330300, Chungcheongnam, South KoreaSamsung SDI Co Ltd, Dev Team, Cheonan Si 330300, Chungcheongnam, South Korea
Choi, Wanuk
Kim, Yang-Soo
论文数: 0引用数: 0
h-index: 0
机构:
Korea Basic Sci Inst, Suncheon Ctr, Sunchon 540742, South KoreaSamsung SDI Co Ltd, Dev Team, Cheonan Si 330300, Chungcheongnam, South Korea
机构:
Samsung SDI Co Ltd, Dev Team, Cheonan Si 330300, Chungcheongnam, South KoreaSamsung SDI Co Ltd, Dev Team, Cheonan Si 330300, Chungcheongnam, South Korea
Back, Chang Keun
Yin, Ri-Zhu
论文数: 0引用数: 0
h-index: 0
机构:
Samsung SDI Co Ltd, R&D Ctr, Cheonan Si 330300, Chungcheongnam, South KoreaSamsung SDI Co Ltd, Dev Team, Cheonan Si 330300, Chungcheongnam, South Korea
Yin, Ri-Zhu
Shin, Se-Jong
论文数: 0引用数: 0
h-index: 0
机构:
Samsung SDI Co Ltd, R&D Ctr, Cheonan Si 330300, Chungcheongnam, South KoreaSamsung SDI Co Ltd, Dev Team, Cheonan Si 330300, Chungcheongnam, South Korea
Shin, Se-Jong
Lee, Yoon-Soo
论文数: 0引用数: 0
h-index: 0
机构:
Samsung SDI Co Ltd, R&D Ctr, Cheonan Si 330300, Chungcheongnam, South KoreaSamsung SDI Co Ltd, Dev Team, Cheonan Si 330300, Chungcheongnam, South Korea
Lee, Yoon-Soo
Choi, Wanuk
论文数: 0引用数: 0
h-index: 0
机构:
Samsung SDI Co Ltd, Dev Team, Cheonan Si 330300, Chungcheongnam, South KoreaSamsung SDI Co Ltd, Dev Team, Cheonan Si 330300, Chungcheongnam, South Korea
Choi, Wanuk
Kim, Yang-Soo
论文数: 0引用数: 0
h-index: 0
机构:
Korea Basic Sci Inst, Suncheon Ctr, Sunchon 540742, South KoreaSamsung SDI Co Ltd, Dev Team, Cheonan Si 330300, Chungcheongnam, South Korea