This paper presents a highly integrated MOSFETonly voltage reference with load driving capability realized in BCD 153 process, featuring a temperature coefficient of 1.6 ppm/C from -40 degrees C to 125 degrees C, a high PSR of 127dB, low noise of 63 nV*11(1-1z for the voltage reference part, and a temperature coefficient of 1.35 ppm/ C from -40 degrees C to 125 degrees C, a PSR of 86dB and a load driving capability of 1 mA for the LDO part. Incorporating an ultra -low average temperature coefficient and load-bearing capability, the circuit under consideration also boasts a remarkably high power-supply rejection ratio. Furthermore, it exhibits commendable performance in terms of stability, noise characteristics, step response, and power consumption. The entire circuit utilizes only 21 MOS transistors, making it significantly compact compared to the conventional approach of combining a voltage reference module with an LDO module, thus resulting in substantial area savings. Besides, this circuit also maintains a stable static operating point across process variations, supporting straightforward migration to alternative processes with only minor adjustments.
