Selective Data Writing in IrMn-Based Perpendicular Magnetic Tunnel Junction Array Through Voltage-Gated Spin-Orbit Torque

被引：19

作者：

Li, Weixiang ^{[1
,2
]}

Liu, Zhaochun ^{[1
]}

Peng, Shouzhong ^{[1
]}

Lu, Jiaqi ^{[1
]}

Liu, Jiahao ^{[1
]}

Li, Xinyuan ^{[1
]}

Lu, Shiyang ^{[1
]}

Otani, Yoshichika ^{[2
]}

Zhao, Weisheng ^{[1
]}

机构：

[1] Beihang Univ, Sch Integrated Circuit Sci & Engn, MIIT Key Lab Spintron, Fert Beijing Inst, Beijing 100191, Peoples R China

[2] Univ Tokyo, Inst Solid State Phys, Chiba 2778581, Japan

来源：

IEEE ELECTRON DEVICE LETTERS | 2024年 / 45卷 / 05期

基金：

中国国家自然科学基金;

关键词：

Magnetic tunneling; Writing; Voltage measurement; Optical switches; Logic gates; Torque; Arrays; Spin-orbit torque; voltage-controlled magnetic anisotropy; field-free switching; perpendicular magnetic tunnel junction; selective data writing;

D O I：

10.1109/LED.2024.3369616

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The interplay of spin-orbit torque (SOT) and voltage-controlled magnetic anisotropy (VCMA) has great potential to be the next-generation writing method for low-power, fast-speed, and high-density memory applications. In this letter, we first experimentally demonstrate field-free voltage-gated SOT switching in IrMn-based perpendicular magnetic tunnel junctions (MTJs) with a diameter of 80 nm. Then we fabricate a memory array that integrates multiple MTJs on a shared IrMn strip. When a gate voltage of 0.8 V is applied to an MTJ in the array, the SOT critical current density decreases by 70%, resulting in a substantial 91% reduction in total power consumption. Through this voltage-gated SOT switching, selective data writing in the MTJ array is accomplished. Moreover, the endurance of more than 1 x 10(12) and the write error rate below 8 x 10(-5) are achieved. These findings demonstrate the high performance of voltage-gated SOT devices and contribute to its practical application in magnetic random-access memory.

引用

页码：921 / 924

页数：4

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