STI GAP-FILLING PERFORMANCE IMPROVEMENT BY THE PROCESS INTEGRATION OPTIMIZATION IN THE 4XNM ETOX NOR FLASH

被引：1

作者：

Wang, Zhuangzhuang ^{[1
]}

Chen, Hualun ^{[1
]}

Gu, Lin ^{[1
]}

Du, Yihang ^{[1
]}

Yao, Chun ^{[1
]}

Zhu, Zhen ^{[1
]}

机构：

[1] Hua Hong Semicond Wuxi Ltd, Wuxi 214028, Jiangsu, Peoples R China

来源：

CONFERENCE OF SCIENCE & TECHNOLOGY FOR INTEGRATED CIRCUITS, 2024 CSTIC | 2024年

关键词：

ETOX Nor Flash; STI gap-fill; Process integration; SIN pullback; HDP;

D O I：

10.1109/CSTIC61820.2024.10532114

中图分类号：

TP39 [计算机的应用];

学科分类号：

081203 ; 0835 ;

摘要：

The gap-fill performance of shallow trench isolation (STI) plays an important role in the cell size shrink of ETOX Nor flash. In this work, we optimize the SIN pullback and high-density plasma (HDP) process to improve STI gap-fill, and the gap-fill performances are investigated by the wafer accept test (WAT) and chip probe (CP). And the void-free gap-fill and the comparable WAT/CP performance are achieved by the process integration of SIN pullback with suitable HPO dosage and the optimized Dep-Etch-Dep cycle of HDP.

引用

页数：3

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