Interface-Type Ionic Memristor for Energy-Efficient Neuromorphic Hardware

被引:1
|
作者
Yoo, Chan Sik [1 ,2 ]
Lee, Hong-Sub [1 ,2 ]
机构
[1] Kyung Hee Univ, Dept Adv Mat Engn Informat & Elect, Yongin 17104, South Korea
[2] Kyung Hee Univ, Integrated Educ Inst Frontier Sci & Technol BK21 F, Yongin 17104, South Korea
基金
新加坡国家研究基金会;
关键词
Interface-type; Ionic memristor; Neuromorphichardware; Alkali ion; Deep neural network; DEVICE; OXIDE;
D O I
10.1021/acsaelm.4c00373
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Recently, hyperscale artificial intelligence (AI) has been undergoing rapid development at an astonishing pace. These hyperscale AIs based on deep neural networks (DNNs) require significant amounts of matrix-vector multiplication operations for learning and inference and are known to consume substantial amounts of power. Currently, digital accelerators such as graphic processing units and neural processing units are used to perform these operations. However, developing accelerators for DNNs that are more energy efficient and capable of faster processing is becoming increasingly essential. Analog in-memory computing (or neuromorphic hardware) technologies using crossbar array architecture and memristor devices are expected to be the most efficient hardware for DNN operations. This topical article aims to introduce, from the perspective of electronic materials (memristors), the technical challenges in developing neuromorphic hardware and the alkali ion-based memristor devices designed to overcome these challenges.
引用
收藏
页码:3013 / 3023
页数:11
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