Tailoring thermoelectric performance of n-type Bi2Te3 through defect engineering and conduction band convergence

被引:3
作者
Rana, Nabakumar [1 ]
Mukherjee, Suchandra [1 ]
Singha, Pintu [2 ]
Das, Subarna [3 ]
Bandyopadhyay, Sudipta [1 ,4 ]
Banerjee, Aritra [1 ,4 ]
机构
[1] Univ Calcutta, Dept Phys, 92 APC Rd, Kolkata 700009, West Bengal, India
[2] Indian Inst Sci Educ & Res, Sch Phys, Maruthamala PO, Thiruvananthapuram 695551, Kerala, India
[3] Jawaharlal Nehru Ctr Adv Sci Res JNCASR, New Chem Unit, Jakkur PO, Bangalore 560064, India
[4] Univ Calcutta, Ctr Res Nanosci & Nanotechnol, JD-2Sect 3,Saltlake, Kolkata 700106, India
关键词
thermoelectrics; transport properties; band convergence; Pisarenko model; Raman spectroscopy; defect engineering; thermoelectric performance; ANNEALING TEMPERATURE; ELECTRONIC-STRUCTURE; POINT-DEFECTS; ENHANCEMENT; TRANSITION; FIGURE; CHARGE; MERIT; POWER; ZT;
D O I
10.1088/1361-648X/ad5245
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Bi2Te3, an archetypical tetradymite, is recognised as a thermoelectric (TE) material of potential application around room temperature. However, large energy gap (Delta E-c) between the light and heavy conduction bands results in inferior TE performance in pristine bulk n-type Bi2Te3. Herein, we propose enhancement in TE performance of pristine n-type Bi2Te3 through purposefully manipulating defect profile and conduction band convergence mechanism. Two n-type Bi2Te3 samples, S1 and S2, are prepared by melting method under different synthesis condition. The structural as well as microstructural evidence of the samples are obtained through powder x-ray diffraction and transmission electron microscopic study. Optothermal Raman spectroscopy is utilized for comprehensive study of temperature dependent phonon vibrational modes and total thermal conductivity (kappa) of the samples which further validates the experimentally measured thermal conductivity. The Seebeck coefficient value is significantly increased from 235 mu VK-1 (sample S1) to 310 mu VK-1 (sample S2). This is further justified by conduction band convergence, where Delta E-c is reduced from 0.10 eV to 0.05 eV, respectively. To verify the band convergence, the double band Pisarenko model is employed. Large power factor (PF) of 2190 mu Wm(-1)K(-2) and lower kappa value leading to ZT of 0.56 at 300 K is gained in S2. The obtained PF and ZT value are among the highest values reported for pristine n-type bulk Bi2Te3. In addition, appreciable value of TE quality factor and compatibility factor (2.7 V-1) at room temperature are also achieved, indicating the usefulness of the material in TE module.
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页数:12
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