Effect of defects on Q factors of single-crystal diamond MEMS resonators

被引：11

作者：

Zhang, Zilong ^{[1
]}

Chen, Guo ^{[1
]}

Gu, Keyun ^{[1
]}

Koizumi, Satoshi ^{[1
]}

Liao, Meiyong ^{[1
]}

机构：

[1] Natl Inst Mat Sci NIMS, Ultrawide Bandgap Semicond Grp, Tsukuba, Ibaraki, Japan

来源：

FUNCTIONAL DIAMOND | 2023年 / 3卷 / 01期

关键词：

Single-crystal diamond; MEMS resonator; Q factor; dislocation; HYDROGEN PLASMA; DISLOCATIONS; BEAM; FILM;

D O I：

10.1080/26941112.2023.2221280

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A resonator with a high Q factor is generally pursued in the single-crystal diamond (SCD) microelectromechanical system (MEMS) for high-performance sensors. In this report, we investigate the oxygen etching effect of SCD on the Q factors of the SCD resonators by using the Raman spectroscopy spatial mapping. We aim to establish the etch pit effect on the Q factors of the SCD MEMS resonators. The 2D Raman imaging technique discloses the dislocations and the local stress in the SCD MEMS resonators in microscale. It is observed that the full width half maximum (FWHM) of the Raman spectra of the SCD resonators has marked relationship with the Q factors of the SCD resonators. The etch pits resulted from the dislocations have weak influence on the Q factors of the SCD resonators.

引用

页数：9

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