Correlation between CO2 Sensitivity and Channel-Layer Thickness in In2O3 Thin-Film Transistor Gas Sensors

被引：1

作者：

Nodera, Ayumu ^{[1
]}

Kobayashi, Ryota ^{[1
]}

Kobayashi, Tsubasa ^{[1
]}

Aikawa, Shinya ^{[1
]}

机构：

[1] Kogakuin Univ, Dept Elect & Elect Engn, Hachioji, Tokyo 1920015, Japan

来源：

ELECTRONICS | 2024年 / 13卷 / 10期

关键词：

gas sensor; CO2; In2O3; thin-film transistor; channel thickness; SENSING PROPERTIES; ENHANCEMENT;

D O I：

10.3390/electronics13101947

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

CO2 monitoring is important for achieving net-zero emissions. Here, we report on a CO2 gas sensor based on an In2O3 thin-film transistor (TFT), which is expected to realize both low-temperature operation and high sensitivity. The effect of channel thickness on TFT performance is well known; however, its effect on CO2 sensitivity has not been fully investigated. We fabricated In2O3 TFTs of various thicknesses to evaluate the effect of channel thickness on CO2 sensitivity. Consequently, TFT gas sensors with thinner channels exhibited higher CO2 sensitivity. This is because the surface effect is more prominent for a thinner film, suggesting that charge transfer between gas molecules and the channel surface through gas adsorption has a significant impact on changes in the TFT parameters in the subthreshold region. The results showed that the In2O3 TFT in thin channels is a promising candidate for CO2-sensitive TFT gas sensors and is useful for understanding an effect of gas adsorption in oxide TFTs with a very thin channel as well.

引用

页数：10

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