Optimization of Magnetic Tunnel Junction Structure through Component Analysis and Deposition Parameters Adjustment

被引：2

作者：

Ghemes, Crina ^{[1
]}

Tibu, Mihai ^{[1
]}

Dragos-Pinzaru, Oana-Georgiana ^{[1
]}

Ababei, Gabriel ^{[1
]}

Stoian, George ^{[1
]}

Lupu, Nicoleta ^{[1
]}

Chiriac, Horia ^{[1
]}

机构：

[1] Natl Inst Res & Dev Tech Phys, Iasi 700050, Romania

来源：

MATERIALS | 2024年 / 17卷 / 11期

关键词：

magnetic tunnel junction; thin films; roughness; tunnel magnetoresistance; sputtering deposition; ROOM-TEMPERATURE; MAGNETORESISTANCE; RF; DC; DEPENDENCE; SENSORS; POWER; RAM;

D O I：

10.3390/ma17112554

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

In this work, we focus on a detailed study of the role of each component layer in the multilayer structure of a magnetic tunnel junction (MTJ) as well as the analysis of the effects that the deposition parameters of the thin films have on the performance of the structure. Various techniques including atomic force microscopy (AFM), scanning electron microscopy (SEM), and transmission electron microscopy (TEM) were used to investigate the effects of deposition parameters on the surface roughness and thickness of individual layers within the MTJ structure. Furthermore, this study investigates the influence of thin films thickness on the magnetoresistive properties of the MTJ structure, focusing on the free ferromagnetic layer and the barrier layer (MgO). Through systematic analysis and optimization of the deposition parameters, this study demonstrates a significant improvement in the tunnel magnetoresistance (TMR) of the MTJ structure of 10% on average, highlighting the importance of precise control over thin films properties for enhancing device performance.

引用

页数：17

共 33 条

[1] Magnetron sputtering technique for analyzing the influence of RF sputtering power on microstructural surface morphology of aluminum thin films deposited on SiO2/Si substrates [J].