An Integrated Low-power Enhanced Pull-up GaN Driver Using SenseHEMT for Reliable and Fast Short-Circuit Protection

被引：0

作者：

Zhuang, Chun-wang ^{[1
]}

Ming, Xin ^{[1
,2
,3
]}

Ye, Zi-kai ^{[1
]}

Qin, Yao ^{[1
]}

Gong, Xin-ce ^{[1
]}

Lu, Yi ^{[1
]}

Li, Si-chao ^{[4
]}

Zhou, Qi ^{[1
,3
]}

Zhang, Bo ^{[1
]}

机构：

[1] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 611731, Peoples R China

[2] UESTC, Shenzhen Inst Adv Study, Shenzhen 518000, Peoples R China

[3] UESTC Guangdong, Inst Elect & Informat Engn, Dongguan 523808, Peoples R China

[4] Hubei Jiufengshan Lab, Wuhan 430074, Peoples R China

来源：

2024 36TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND IC S, ISPSD 2024 | 2024年

关键词：

Monolithic GaN integration; low-power enhanced pull-up (LPEP) technique; short-circuit protection; senseHEMT;

D O I：

10.1109/ISPSD59661.2024.10579657

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

This article proposed an integrated GaN driver with a low-power enhanced pull-up (LPEP) technique to achieve the decoupling between the charging path and the leakage path of the inverter in the driver. Considering the poor short-circuit tolerance of GaN power HEMTs, a low-loss fast short-circuit detection (FSCD) technique using senseHEMT is proposed for reliable and fast short-circuit protection. Experimental results show that the leakage current of the single-stage inverter is 28 mu A and the rise time of the gate voltage V-G of powerHEMT is 0.71ns. The measured minimum short-circuit response time is 37ns.

引用

页码：351 / 354

页数：4

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