Rapid synthesis of MoS2 for transistors and memristors

被引：1

作者：

Lin, Weiyi ^{[1
]}

机构：

[1] Xiamen Univ, Sch Elect Sci & Engn, Xiamen 361005, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2024年 / 124卷 / 24期

基金：

中国国家自然科学基金;

关键词：

MOLYBDENUM-DISULFIDE; AMMONIUM TETRATHIOMOLYBDATE; LARGE-AREA; GROWTH; FILMS;

D O I：

10.1063/5.0196644

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This study presents a rapid synthesis method using carbon fibers, converting ammonium tetrathiomolybdate to molybdenum disulfide films with controllable thickness (1-5 nm) and smooth surface (200 pm on average) in tens of seconds. Electronic devices based on these multilayers exhibit promising performance: memristors operate at an average of 1.5 V; field-effect transistors display electron mobility ranging from 0.1 to 0.4 cm(2)/V center dot s with a 10(3) on/off ratio. The electrical performance can be enhanced by optimizing annealing recipes. This scalable, time-efficient method holds the potential for large-scale production of multilayer two-dimensional semiconductors for electronics.

引用

页数：4

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