Kinetics of Carrier Lifetime Degradation in High-Temperature 1 MeV Electron-Irradiated Cz n-Si Associated with the Formation of Divacancy-Oxygen Defects

被引：1

作者：

Kras'ko, Mykola ^{[1
]}

Kolosiuk, Andrii ^{[1
]}

Povarchuk, Vasyl ^{[1
]}

Voitovych, Vasyl ^{[1
]}

机构：

[1] NAS Ukraine, Inst Phys, Lab Radiat Technol, 46 Nauki Ave, UA-03028 Kiev, Ukraine

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2024年 / 221卷 / 17期

关键词：

carrier lifetime degradation; divacancy-oxygen complexes; high-temperature irradiation; radiation defects; silicon; SILICON; DEPENDENCE;

D O I：

10.1002/pssa.202400300

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Kinetics of degradation of the nonequilibrium charge carrier lifetime (tau) in Czochralski-grown (Cz) n-Si irradiated with 1 MeV electrons at different temperatures in the range from 20 to 285 degrees C are experimentally and theoretically investigated. It is established that changes in tau are qualitatively and quantitatively determined by the temperature of electron irradiation. Analysis of experimental data using the Shockley-Read-Hall (SRH) theory shows that the formation of recombinationally active divacancy-oxygen (V2O) and vacancy-oxygen (VO) complexes is the main mechanism of tau degradation in this experiment. Kinetics of the nonequilibrium charge carrier lifetime (tau) degradation in Czochralski-grown n-Si irradiated with 1 MeV electrons at different temperatures (20-285 degrees C) has been investigated. It has been established that the degradation of tau qualitatively and quantitatively determined by the temperature of electron irradiation, and the main mechanism of tau degradation is the formation of divacancy-oxygen and vacancy-oxygen complexes.image (c) 2024 WILEY-VCH GmbH

引用

页数：5

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