Exploring the structural and electronic properties of self-assembled bismuth nanolines on InAs (001) surface through first-principles calculations

被引:0
作者
Kourchid, Kouloud [1 ]
Mbarki, Mourad [1 ,2 ]
Alaya, Ramzi [1 ,3 ]
Althaqafi, Yazeed [2 ]
Rebey, Ahmed [4 ]
机构
[1] Univ Gabes, Fac Sci Gabes, Lab Phys Mat & Nanomat Appl Environm LaPhyMNE, Gabes 6072, Tunisia
[2] Univ Jeddah, Fac Sci, Phys Dept, Jeddah, Saudi Arabia
[3] Univ Technol & Appl Sci, Rustaq Coll Educ, Sci Dept, Muscat, Oman
[4] Qassim Univ, Coll Sci, POB 6622, Buraydah, Qassim, Saudi Arabia
关键词
Bi nanoline; InAs (001) surface; DFT; Self-assembly; Semiconductor surfaces; BI NANOLINES; NANOWIRES; GEOMETRY; GROWTH;
D O I
10.1016/j.mssp.2024.108603
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The structural and electronic properties of Bi nanolines on the InAs (001) surface are investigated via density functional theory. Thereby, three models, Miki (M) (Miki et al. Phys. Rev. B 59 (1999)14,868), Naitoh (N) (M. Naitoh et al. Surf. Sci 377 (1997) 899), and Two Ad-Dimer (TAD) (J.H.G. Owen et al. Phys. Rev. Lett 22 (2002) 226,104) are implemented to simulate the formation of Bi nanolines and study their physical properties. The structural analysis reveals some differences in atomic arrangements, bond lengths, and surface organization among the different models. The comparison of our results with Bi nanolines on Si(001) highlights the substrate role in Bi nanostructure formation. The surface stability examination demonstrates that the M model is energetically the most favorable one. On the other hand, the electronic properties analysis reveals that M, TAD models exhibit semiconductor behavior, whereas, the N model show a metallic character. Moreover, the calculations of the partial electronic charge density of surface states provide valuable information about the electronic structure of Bi nanolines on InAs (001). Finally, this study constitutes a theoretical support that can open the way to experimentally produce Bi nanostructures on the InAs(001) surface as a beneficial solution for several applications.
引用
收藏
页数:9
相关论文
共 41 条
[1]   Properties of self-assembled Bi nanolines on InAs(100) studied by core-level and valence-band photoemission, and first-principles calculations [J].
Ahola-Tuomi, M. ;
Punkkinen, M. P. J. ;
Laukkanen, P. ;
Kuzmin, M. ;
Lang, J. ;
Schulte, K. ;
Pietzsch, A. ;
Perala, R. E. ;
Rasanen, N. ;
Vayrynen, I. J. .
PHYSICAL REVIEW B, 2011, 83 (24)
[2]   Formation of an ordered pattern of Bi nanolines on InAs(100) by self-assembly [J].
Ahola-Tuomi, M. ;
Laukkanen, P. ;
Punkkinen, M. P. J. ;
Perala, R. E. ;
Vayrynen, I. J. ;
Kuzmin, M. ;
Schulte, K. ;
Pessa, M. .
APPLIED PHYSICS LETTERS, 2008, 92 (01)
[3]   Density-functional calculations for self-assembled Bi-nanolines on the InAs(100) surface [J].
AlZahrani, A. Z. ;
Srivastava, G. P. .
JOURNAL OF APPLIED PHYSICS, 2009, 106 (05)
[4]   Electronic and transport properties of bismuth nanolines for applications in molecular electronics [J].
Belosludov, R. V. ;
Farajian, A. A. ;
Mizuseki, H. ;
Miki, K. ;
Kawazoe, Y. .
PHYSICAL REVIEW B, 2007, 75 (11)
[5]   Tuneable 2D surface Bismuth incorporation on InAs nanosheets [J].
Benter, Sandra ;
Liu, Yi ;
Maciel, Renan Da Paixao ;
Ong, Chin Shen ;
Linnala, Lassi ;
Pan, Dong ;
Irish, Austin ;
Liu, Yen-Po ;
Zhao, Jianhua ;
Xu, Hongqi ;
Eriksson, Olle ;
Timm, Rainer ;
Mikkelsen, Anders .
NANOSCALE, 2023, 15 (21) :9551-9559
[6]   Atomic-scale nanowires: physical and electronic structure [J].
Bowler, DR .
JOURNAL OF PHYSICS-CONDENSED MATTER, 2004, 16 (24) :R721-R754
[7]   Structure of Bi nanolines: using tight binding to search parameter space [J].
Bowler, DR ;
Owen, JHG .
JOURNAL OF PHYSICS-CONDENSED MATTER, 2002, 14 (26) :6761-6769
[8]   Structural properties of Bi thin film grown on Si (111) by quasi-van der Waals epitaxy [J].
Chou, Chieh ;
Wu, Bo-Xun ;
Lin, Hao-Hsiung .
SCIENTIFIC REPORTS, 2022, 12 (01)
[9]   Quantum ESPRESSO toward the exascale [J].
Giannozzi, Paolo ;
Baseggio, Oscar ;
Bonfa, Pietro ;
Brunato, Davide ;
Car, Roberto ;
Carnimeo, Ivan ;
Cavazzoni, Carlo ;
de Gironcoli, Stefano ;
Delugas, Pietro ;
Ruffino, Fabrizio Ferrari ;
Ferretti, Andrea ;
Marzari, Nicola ;
Timrov, Iurii ;
Urru, Andrea ;
Baroni, Stefano .
JOURNAL OF CHEMICAL PHYSICS, 2020, 152 (15)
[10]   Density-functional expansion methods: Evaluation of LDA, GGA, and meta-GGA functionals and different integral approximations [J].
Giese, Timothy J. ;
York, Darrin M. .
JOURNAL OF CHEMICAL PHYSICS, 2010, 133 (24)