Interface trap-induced radiofrequency and low-frequency noise analysis under temperature variation of a heterostacked source L-gate tunnel field effect transistor

被引：0

作者：

Das, Debika ^{[1
]}

Chakraborty, Ujjal ^{[1
]}

Borah, Pranjal ^{[2
]}

机构：

[1] NIT Silchar, Dept Elect & Commun Engn, Silchar, Assam, India

[2] Gauhati Univ, Dept Instrumentat & USIC, Gauhati, Assam, India

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2024年 / 39卷 / 08期

关键词：

interface trap; low frequency noise; pocket; RF; temperature; WORK-FUNCTION VARIATION; FET; TFET; PERFORMANCE; SIMULATION; CHARGES; IMPACT;

D O I：

10.1088/1361-6641/ad5466

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This work offers a comprehensive analysis of the adverse impact of interface trap charge (ITC) under the influence of temperature variation on a heterostacked (HS) source L-gate tunnel field effect transistor (TFET) having a SiGe pocket. An investigation of both static and radiofrequency (RF) characteristics has been carried out. It appears that ITCs situated at the Si-oxide interface fluctuate the flat-band voltage to alter the various analog/RF parameter characteristics. Uniform ITCs are seen to be less susceptible to degradation in device characteristics. Low-frequency noise (LFN) analysis has also been carried out considering the impact of different trap distributions (uniform and Gaussian) and densities, which are compared. The temperature dependence of LFN has been studied under the influence of different distributed ITCs, and this has rarely been explored. Moreover, a comparative analysis has been made of the device behavior and LFN characteristics of HS L-gate TFET structures with and without a SiGe pocket. Structures with SiGe pockets were found not to be susceptible to noise effects.

引用

页数：18

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