Electron-optical phonon scattering in doped GaAs quantum well

被引：0

作者：

Aleshkin, V. Ya. ^{[1
]}

Dubinov, A. A. ^{[1
]}

机构：

[1] RAS, Dept Semicond Phys, Inst Phys Microstruct, Nizhnii Novgorod 603950, Russia

来源：

PHYSICAL REVIEW MATERIALS | 2024年 / 8卷 / 07期

关键词：

MICROSCOPIC CALCULATION; SINGLE; TEMPERATURE; CONFINEMENT; CONTINUUM;

D O I：

10.1103/PhysRevMaterials.8.074602

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The influence of the presence of free electrons on the spectra of optical phonons and on electron-optical phonon scattering in quantum wells has been theoretically studied. As an example, calculations of the optical phonon spectra, intrasubband and intersubband electron-optical phonon scattering in 10-nm-GaAs quantum wells surrounded by Al0.3Ga0.7As barriers were carried out at two temperatures of 77 and 300 K. It was shown that the frequency of intrasubband scattering varies nonmonotonically with increasing electron concentration in the quantum well. The relaxation rates of the wave vector and energy for scattering in the first and second subbands are found. It is shown that with increasing electron concentration in the quantum well, the frequency of intersubband scattering decreases.

引用

页数：10

共 38 条

[1] Electron-optical phonon scattering in the quantum well of a HgTe/CdHgTe heterostructure [J].

Aleshkin, V. Ya. ;

Domnina, O. L. ;

Zholudev, M. S. .

PHYSICAL REVIEW B, 2024, 109 (07)

[2] Optical phonons in quantum well with anisotropic permittivity [J].

Aleshkin, V. Ya. ;

Zholudev, M. S. .

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2024, 157

[3] Effect of the spin-orbit interaction on intersubband electron transition in GaAs/AlGaAs quantum well heterostructures [J].

Aleshkin, V. Ya. ;

Dubinov, A. A. .

PHYSICA B-CONDENSED MATTER, 2016, 503 :32-37

[4] High-power laser diodes (λ=808-850 nm) based on asymmetric separate-confinement heterostructures [J].

Andreev, A. Yu. ;

Leshko, A. Yu. ;

Lyutetskii, A. V. ;

Marmalyuk, A. A. ;

Nalyot, T. A. ;

Padalitsa, A. A. ;

Pikhtin, N. A. ;

Sabitov, D. R. ;

Simakov, V. A. ;

Slipchenko, S. O. ;

Khomylev, M. A. ;

Tarasov, I. S. .

SEMICONDUCTORS, 2006, 40 (05) :611-614

[5] SEMICONDUCTING AND OTHER MAJOR PROPERTIES OF GALLIUM-ARSENIDE [J].

BLAKEMORE, JS .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) :R123-R181

[6] Thermoelectrically cooled THz quantum cascade laser operating up to 210K [J].

Bosco, L. ;

Franckie, M. ;

Scalari, G. ;

Beck, M. ;

Wacker, A. ;

Faist, J. .

APPLIED PHYSICS LETTERS, 2019, 115 (01)

[7] Ultrafast dynamics of hot carriers in a quasi-two-dimensional electron gas on InSe [J].

Chen, Zhesheng ;

Sjakste, Jelena ;

Dong, Jingwei ;

Taleb-Ibrahimi, Amina ;

Rueff, Jean-Pascal ;

Shukla, Abhay ;

Peretti, Jacques ;

Papalazarou, Evangelos ;

Marsi, Marino ;

Perfetti, Luca .

PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA, 2020, 117 (36) :21962-21967

[8] ELECTRODYNAMICS OF QUASI-2-DIMENSIONAL ELECTRONS [J].

DAHL, DA ;

SHAM, LJ .

PHYSICAL REVIEW B, 1977, 16 (02) :651-661

[9] Model of a Terahertz Quantum-Cascade Laser Based on Two-Dimensional Plasmons [J].

Dubinov, A. A. ;

Aleshkin, V. Ya .

SEMICONDUCTORS, 2021, 55 (11) :828-830

[10] Bound-to-continuum and two-phonon resonance quantum-cascade lasers for high duty cycle, high-temperature operation [J].

Faist, J ;

Hofstetter, D ;

Beck, M ;

Aellen, T ;

Rochat, M ;

Blaser, S .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 2002, 38 (06) :533-546

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