Facet junction engineering for enhanced SERS activity of Ag/Cu2O composite substrates

被引:1
作者
Zhou, Ming [1 ]
He, Xunfei [1 ]
Gong, Yinyan [1 ]
Li, Can [1 ]
Niu, Lengyuan [1 ]
机构
[1] China Jiliang Univ, Inst Optoelect Mat & Devices, Coll Opt & Elect Technol, Hangzhou 310018, Peoples R China
基金
中国国家自然科学基金;
关键词
RAMAN-SCATTERING; NANOSTRUCTURES; SPECTROSCOPY; DEPOSITION; SILVER;
D O I
10.1039/d4cp01538j
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Featuring ultra-high sensitivity and molecule-specific detection ability, surface-enhanced Raman scattering (SERS) is suitable for the rapid sensing of trace-level chemicals in biological, environmental, and agricultural samples. Although crystal facet junction engineering is a powerful tool to manipulate the optoelectronic properties of semiconducting materials, its correlation with the SERS sensing activity of noble metal/semiconductor composites has still not been clarified. In this work, Ag was deposited on Cu2O nanocrystals enclosed by different facets, including {100} (cube), {111} (octahedron), and {100}/{111} (truncated octahedron), and a detailed study of their SERS performance was carried out. It was found that Ag/truncated-octahedral Cu2O (Ag/Cu2O(J3)) exhibited superior SERS activity to Ag/cubic Cu2O (Ag/Cu2O(C)) and Ag/octahedral Cu2O (Ag/Cu2O(O)). The {100}/{111} facet junction in Cu2O can promote the separation and transfer of photogenerated charge carriers, which is beneficial for enhancing SERS sensing performance. Moreover, Ag/Cu2O(J3) has a higher content of oxygen vacancies, providing extra interfacial charge-transfer pathways to the analyte, which also contribute to improving the SERS activity. The low detection limit of Ag/Cu2O(J3) was 1 x 10(-11) M for 4-nitrobenzenethiol, two orders of magnitude lower than that of Ag/Cu2O(C) and Ag/Cu2O(O). In addition, Ag/Cu2O(J3) could detect CV and R6G at concentrations down to 1 x 10(-10) M and 1 x 10(-8) M, respectively. The findings of this work can provide insightful information for designing metal/semiconductor substrates toward SERS sensing application by regulating the crystal facet junction.
引用
收藏
页码:18223 / 18232
页数:10
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