Highly flexible and uniform switching of poly (3,4-ethylenedioxythiophene):poly(styrenesulfonate)based RRAM achieved through Ag NWs embedded for high-density storage

A super -flexible resistive random access memory (RRAM) based on poly(3,4-ethylenedioxythiophene):poly (styrenesulfonate) (PEDOT:PSS) embedded with Ag nanowires (Ag NWs) is fabricated on a piece of aluminum foil. In the design, the aluminum foil is used as the substrate as well as the electrode, which not only solves the flexibility of the device, but also greatly reduces the volume of the device, helpful to realize high-density integration. The uniformity of the device is greatly improved after the modification of the Ag NWs. The fluctuation range of the Set voltage (Vset) / Reset voltage (Vreset) is reduced from 0.9-2.78 V/ -0.45--1.25 V to 1.14-1.35 V/-1 -0.5 V. What's more, the average Vset / Vreset is decreased from 2.5 V/-1.25 V to 1.2 V/-0.7 V. Also, the multilevel switching potential of the device is confirmed by controlling the reset voltage(( -0.5, -0.7, and -1.0 V). After repetitive 1000 bendings of the device with a radius of 6 mm, a stable memory window of more than 103 is still detected during 300 continuous cycles. No degradation is observed from the two resistance states at 85 degrees C after 104 s. These results clearly demonstrate that the device has a broad application prospect in the future application of flexible electronics due to its simple and thin structure, low cost, excellent flexibility and good uniformity.