The effect of energy and momentum transfer during magnetron sputter deposition of yttrium oxide thin films

被引:21
作者
Xia, Jinjiao [1 ,2 ]
Liang, Wenping [1 ]
Miao, Qiang [1 ]
Depla, Diederik [2 ]
机构
[1] Nanjing Univ Aeronaut & Astronaut, Dept Mat Sci & Engn, Nanjing 211106, Jiangsu, Peoples R China
[2] Univ Ghent, Dept Solid State Sci, Krijgslaan 281 S1, B-9000 Ghent, Belgium
基金
中国国家自然科学基金;
关键词
Magnetron sputtering; Y2O3; Energy per arriving atom; Intrinsic stress; X-RAY-DIFFRACTION; PHASE-TRANSFORMATION; INTRINSIC STRESS; INTERNAL-STRESS; Y2O3; FILMS; MICROSTRUCTURE; RESISTANCE; ALLOY; PACK;
D O I
10.1016/j.apsusc.2017.12.205
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The influence of the ratio between the energy and the deposition flux, or the energy per arriving atom, on the growth of Y2O3 sputter deposited thin films has been studied. The energy per arriving atom has been varied by the adjustment of the discharge power, and/or the target-to-substrate distance. The relationship between the energy per arriving atom and the phase evolution, grain size, microstructure, packing density and residual stress was investigated in detail. At low energy per arriving atom, the films consist of the monoclinic B phase with a preferential (111) orientation. A minority cubic C phase appears at higher energy per arriving atom. A study of the thin film cross sections showed for all films straight columns throughout the thickness, typically for a zone II microstructure. The intrinsic stress is compressive, and increases with increasing energy per atom. The same trend is observed for the film density. Simulations show that the momentum transfer per arriving atom also scales with the energy per arriving atom. Hence, the interpretation of the observed trends as a function of the energy per arriving atom must be treated with care. (C) 2018 Elsevier B.V. All rights reserved.
引用
收藏
页码:545 / 551
页数:7
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