H plus implantation induced defects distribution in 4H-SiC single crystal film fabricated by Crystal-Ion-Slicing and its effects on electrical behavior: A multiple characterization study

The composite substrate of SiC single crystal films fabricated by Crystal-Ion-Slicing (CIS) is acknowledged as an excellent material platform for the realization of electronic devices with specific functions. In CIS technology, the transferred monocrystalline films can retain good monocrystalline quality close to the virgin monocrystalline quality, but the lattice damage caused by ion implantation and crystal cleavage is still not negligible. The distribution of H+ implantation induced defects is studied in this paper, according to which the transferred film can be divided into lattice distortion region, moderately damaged region and application region. The lattice distortion region has serious lattice defects and stacking faults, while the moderately damaged layer is dominated by high lattice stress and high density point defects. For application region, in addition to the defect morphology, its influence on the electrical behavior is also investigated, which indicate the defects are mainly vacancy defects introduced by the H+ penetration, which act as carrier traps and recombination centers in electronic behavior. The research work is helpful to further understand the microstructure and defect distribution of the films of various materials fabricated by the common technology CIS, and can provide a theoretical basis for further defect layer removal and defect repair.