Transport and dielectric properties of MIS structure with embedded Si QDs (AuPd/SiO2:Si QDs/n-Si) grown by MBE

This study focuses on the growth of silicon quantum dots (Si QDs) on insulator substrates via solid-state dewetting of ultrathin silicon films deposited by molecular beam epitaxy (MBE). The resulting Si QDs exhibit welldefined spherical shapes, low size dispersion with an average diameter of 6 nm, and a high density (1012/cm2), making them ideal for microelectronic applications. Current-voltage spectroscopy and impedance spectroscopy were employed to investigate the electrical transport and dielectric properties of Si QDs integrated into a metalinsulator-semiconductor (MIS) structure (AuPd/SiO2: Si QDs/n-Si). Current-voltage measurements reveal that the insertion of Si QDs into the MIS structure improves the electrical transport by introducing new conduction mechanisms. Impedance measurements demonstrate the influence of Si QDs on the frequency dependence of the real part of the dielectric constant (epsilon ') and the loss tangent (tan delta). Furthermore, Si QDs impact both the real (M ') and imaginary (M '') parts of the electric modulus. Despite slight deviations in dielectric properties, the MIS structure retains its fundamental nature. These investigations affirm the high electrical quality of Si QDs grown via solid-state dewetting and offer valuable insights for researchers engaged in the development of Si QD-based devices, such as non-volatile memories and MIS photodetectors.