Defect structure regulation and thermoelectric transfer performance in n-type Bi2-xSbxTe3-ySey-based compounds

被引:2
作者
Li Rui-Ying [1 ,2 ]
Luo Ting-Ting [1 ,2 ]
Li Mao [1 ,2 ]
Chen Shuo [1 ,2 ]
Yan Yong-Gao [1 ,2 ]
Wu Jin-Song [2 ,3 ]
Su Xian-Li [1 ,2 ]
Zhang Qing-Jie [2 ]
Tang Xin-Feng [1 ,2 ]
机构
[1] Wuhan Univ Technol, Longzhong Lab Hubei Prov, Xiangyang 441000, Peoples R China
[2] Wuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R China
[3] Wuhan Univ Technol, Nanostruct Res Ctr, Wuhan 430070, Peoples R China
基金
中国国家自然科学基金;
关键词
Bi2Te3-based compound; defect engineering; thermoelectric properties; BISMUTH TELLURIDE; ANTISITE DEFECTS; POWER-GENERATION; BI2TE3; CONDUCTIVITY; THERMOPOWER; SB2TE3; FIGURE; MERIT;
D O I
10.7498/aps.73.20240098
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Bi2Te3-based compounds are thermoelectric materials with the best performance near room temperature. The existence of a large number of complex defects makes defect engineering a core stratagem for adjusting and improving the thermoelectric performance. Therefore, understanding and effectively controlling the existence form and concentration of defects is crucial for achieving high-thermoelectric performance in Bi2Te3-based alloy. Herein, a series of Cl doped n-type quaternary Bi2-xSbxTe3-ySey compounds is synthesized by the zone-melting method. The correlation between defect evolution process and thermoelectric performance is systematically investigated by first-principles calculation and experiments. Alloying Sb on Bi site and Se on Te site induce charged structural defects, leading to a significant change in the carrier concentration. For Bi2-xSbxTe2.994Cl0.006 compounds, alloying Sb on Bi site reduces the formation energy of the antisite defect, which generates the antisite defect and accompanied with the increase of the minority carrier concentration from 2.09x10(16) to 3.99x10(17) cm(-3). The increase of the minority carrier severely deteriorates the electrical transport properties. In contrast, alloying Se in the Bi1.8Sb0.2Te2.994-ySeyCl0.006 compound significantly lowers the formation energy of the complex defect +, which becomes more energetically favorable and suppresses the formation of the antisite defect. As a result, the concentration of minority carriers decreases to 1.46x10(16) cm(-3). This eliminates the deterioration effect of the minority carrier on the electrical transport properties of the material and greatly improves the power factor. A maximum power factor of 4.49 mW/(m center dot K-2) is achieved for Bi1.8Sb0.2Te2.944Se0.05Cl0.006 compound at room temperature. By reducing thermal conductivity through intensifying the phonon scattering via alloying Sb and Se, the maximum ZT value of 0.98 is attained for Bi1.8Sb0.2Te2.844Se0.15Cl0.006 compound at room temperature. Our finding provides an important guidance for adjusting point defects, carrier concentrations, and thermoelectric performances in Bi2Te3-based compounds with complex compositions.
引用
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页数:10
相关论文
共 38 条
[1]   Thermoelectric coolers for on-chip thermal management: Materials, design, and optimization [J].
Chen, Wen-Yi ;
Shi, Xiao-Lei ;
Zou, Jin ;
Chen, Zhi-Gang .
MATERIALS SCIENCE & ENGINEERING R-REPORTS, 2022, 151
[2]   Understanding the Structure and Properties of Sesqui-Chalcogenides (i.e., V2VI3 or Pn2Ch3 (Pn = Pnictogen, Ch = Chalcogen) Compounds) from a Bonding Perspective [J].
Cheng, Yudong ;
Cojocaru-Miredin, Oana ;
Keutgen, Jens ;
Yu, Yuan ;
KUpers, Michael ;
Schumacher, Mathias ;
Golub, Pavlo ;
Raty, Jean-Yves ;
Dronskowski, Richard ;
Wuttig, Matthias .
ADVANCED MATERIALS, 2019, 31 (43)
[3]   UBER KRISTALLSTRUKTUR + ELEKTRISCHE EIGENSCHAFTEN DER WISMUTSELENIDE BI2SE2 + BI2SE3 [J].
GOBRECHT, H ;
PANTZER, G ;
BOETERS, KE .
ZEITSCHRIFT FUR PHYSIK, 1964, 177 (01) :68-&
[4]   Giant thermopower of ionic gelatin near room temperature [J].
Han, Cheng-Gong ;
Qian, Xin ;
Li, Qikai ;
Deng, Biao ;
Zhu, Yongbin ;
Han, Zhijia ;
Zhang, Wenqing ;
Wang, Weichao ;
Feng, Shien-Ping ;
Chen, Gang ;
Liu, Weishu .
SCIENCE, 2020, 368 (6495) :1091-+
[5]   High efficiency Bi2Te3-based materials and devices for thermoelectric power generation between 100 and 300 °C [J].
Hao, Feng ;
Qiu, Pengfei ;
Tang, Yunshan ;
Bai, Shengqiang ;
Xing, Tong ;
Chu, Hsu-Shen ;
Zhang, Qihao ;
Lu, Ping ;
Zhang, Tiansong ;
Ren, Dudi ;
Chen, Jikun ;
Shi, Xun ;
Chen, Lidong .
ENERGY & ENVIRONMENTAL SCIENCE, 2016, 9 (10) :3120-3127
[6]   Resonant levels in bulk thermoelectric semiconductors [J].
Heremans, Joseph P. ;
Wiendlocha, Bartlomiej ;
Chamoire, Audrey M. .
ENERGY & ENVIRONMENTAL SCIENCE, 2012, 5 (02) :5510-5530
[7]   ENERGY FORMATION OF ANTISITE DEFECTS IN DOPED SB2TE3 AND BI2TE3 CRYSTALS [J].
HORAK, J ;
CERMAK, K ;
KOUDELKA, L .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1986, 47 (08) :805-809
[8]   ANTI-SITE DEFECTS IN N-BI2SE3 CRYSTALS [J].
HORAK, J ;
STARY, Z ;
LOSTAK, P ;
PANCIR, J .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1990, 51 (12) :1353-1360
[9]   Thermoelectrics for medical applications: Progress, challenges, and perspectives [J].
Hu, Boxuan ;
Shi, Xiao-Lei ;
Zou, Jin ;
Chen, Zhi-Gang .
CHEMICAL ENGINEERING JOURNAL, 2022, 437
[10]   Effect of Dislocation Arrays at Grain Boundaries on Electronic Transport Properties of Bismuth Antimony Telluride: Unified Strategy for High Thermoelectric Performance [J].
Hwang, Jae-Yeol ;
Kim, Jungwon ;
Kim, Hyun-Sik ;
Kim, Sang-Il ;
Lee, Kyu Hyoung ;
Kim, Sung Wng .
ADVANCED ENERGY MATERIALS, 2018, 8 (20)